Semiconductor device, display device, and electronic appliance

• US 9,184,189 B2
• Filed: 06/23/2014
• Issued: 11/10/2015
• Est. Priority Date: 03/27/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uochi, Hideki, Kawae, Daisuke
• Primary Examiner(s): Jahan, Bilkis
• Application Number:
  US14/311,924
• Publication Number:
  US 20140302639A1
• Time in Patent Office: 505 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a first conductive layer and a second conductive layer over a substrate;

forming a first insulating layer over the first conductive layer and the second conductive layer;

forming an oxide semiconductor layer over the first insulating layer, wherein the oxide semiconductor layer continuously extends over the first conductive layer and the second conductive layer;

forming a second insulating layer over the oxide semiconductor layer;

forming a third conductive layer and a fourth conductive layer over the second insulating layer,

wherein the third conductive layer, the first conductive layer and the oxide semiconductor layer overlap with each other;

wherein the fourth conductive layer, the second conductive layer and the oxide semiconductor layer overlap with each other;

wherein the third conductive layer contacts the first conductive layer through openings of the first insulating layer and the second insulating layer; and

wherein the fourth conductive layer contacts the second conductive layer through openings of the first insulating layer and the second insulating layer.

2. The semiconductor device according to claim 1, wherein the third conductive layer extends in parallel with the first conductive layer.

3. The semiconductor device according to claim 1, wherein the fourth conductive layer extends in parallel with the second conductive layer.

4. The semiconductor device according to claim 1, wherein at least one of the first conductive layer and the second conductive layer is electrically connected to a scan line driver circuit over the substrate.

5. The semiconductor device according to claim 1, wherein at least one of the first conductive layer and the second conductive layer is electrically connected to a signal line driver circuit over the substrate.

6. The semiconductor device according to claim 1, wherein the semiconductor device is a display device.

7. The semiconductor device according to claim 1, wherein the semiconductor device is a liquid crystal device.

8. The semiconductor device according to claim 1, wherein the semiconductor device is an electroluminescence display device.

9. A method for manufacturing a semiconductor device comprising:

forming a first conductive layer in a terminal portion and a second conductive layer in a pixel portion over a substrate;

forming a first insulating layer over the first conductive layer;

forming a first oxide semiconductor layer in the terminal portion and a second oxide semiconductor layer in the pixel portion, wherein the first oxide semiconductor layer overlaps with the first conductive layer with the first insulating layer interposed therebetween;

forming a second insulating layer over the first oxide semiconductor layer;

forming a third conductive layer over the second insulating layer,

wherein the third conductive layer, the first conductive layer and the first oxide semiconductor layer overlap with each other;

wherein the third conductive layer contacts the first conductive layer through openings of the first insulating layer and the second insulating layer.

10. The semiconductor device according to claim 9, wherein the third conductive layer extends in parallel with the first conductive layer.

11. The semiconductor device according to claim 9, wherein the first conductive layer is electrically connected to a scan line driver circuit over the substrate.

12. The semiconductor device according to claim 9, wherein at least one of the first conductive layer and the second conductive layer is electrically connected to a signal line driver circuit over the substrate.

13. The semiconductor device according to claim 9, wherein the semiconductor device is a display device.

14. The semiconductor device according to claim 9, wherein the semiconductor device is a liquid crystal device.

15. The semiconductor device according to claim 9, wherein the semiconductor device is an electroluminescence display device.