Organic light-emitting display apparatus and method of manufacturing the same

• US 9,184,220 B2
• Filed: 08/06/2014
• Issued: 11/10/2015
• Est. Priority Date: 02/07/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Group)
• Original Assignee: Samsung Display Company Limited (Samsung Group)
• Inventors: Cho, Kyu-Sik, Baek, Min-Ji, Seo, Dong-Rock
• Primary Examiner(s): Hines, Anne
• Assistant Examiner(s): DIAZ, JOSE
• Application Number:
  US14/453,554
• Publication Number:
  US 20150228699A1
• Time in Patent Office: 461 Days
• Field of Search: 445 24- 25, 313498-512
• US Class Current: 1/1
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/1315 comprising structures specially adapted for lowering the resistance
• CPC Class Codes: H10K 59/88 Dummy elements, i.e. elements having non-functional features
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

An organic light-emitting display apparatus includes: a substrate; a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode overlapping a gate region of the active layer, a source electrode overlapping a source region of the active layer, and a drain electrode overlapping a drain region of the active layer; a first electrode electrically connected to one of the source electrode or the drain electrode; a first dummy conductive pattern overlapping a dummy region of the active layer between the gate region and one of the source region or the drain region corresponding to the one of the source electrode or the drain electrode; an intermediate layer on the first electrode and comprising at least an organic emission layer; and a second electrode on the intermediate layer.

Claims

1. An organic light-emitting display apparatus comprising:

a substrate;

a thin film transistor (TFT) on the substrate and comprising an active layer, a gate electrode overlapping a gate region of the active layer, a source electrode overlapping a source region of the active layer, and a drain electrode overlapping a drain region of the active layer;

a first electrode electrically connected to one of the source electrode or the drain electrode;

a first dummy conductive pattern overlapping a dummy region of the active layer between the gate region and one of the source region or the drain region corresponding to the one of the source electrode or the drain electrode;

an intermediate layer on the first electrode and comprising at least an organic emission layer; and

a second electrode on the intermediate layer.

2. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern and the dummy region form a dummy capacitor.

3. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern is separated from the gate electrode.

4. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern is separated from the source electrode and the drain electrode.

5. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern does not overlap the source electrode or the drain electrode.

6. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern is an island pattern.

7. The organic light-emitting display apparatus of claim 1, wherein the first electrode comprises a same material and is in a same layer as the gate electrode.

8. The organic light-emitting display apparatus of claim 1, further comprising a gate insulating layer between the active layer and the gate electrode, wherein the first electrode is on the gate insulating layer.

9. The organic light-emitting display apparatus of claim 1, further comprising a storage capacitor electrically connected to the TFT, wherein the first dummy conductive patter comprises a same material and is in a same layer as a first terminal of the storage capacitor.

10. The organic light-emitting display apparatus of claim 9, wherein the active layer comprises a same material and is in a same layer as a second terminal of the storage capacitor.

11. The organic light-emitting display apparatus of claim 1, further comprising a second dummy conductive patter overlapping the first dummy conductive pattern.

12. The organic light-emitting display apparatus of claim 11, wherein the second dummy conductive pattern is separated from the source electrode and the drain electrode.

13. The organic light-emitting display apparatus of claim 11, wherein the second dummy conductive pattern is an island pattern.

14. The organic light-emitting display apparatus of claim 11, wherein the second dummy conductive pattern comprises a same material and is in a same layer as the source electrode or the drain electrode.

15. The organic light-emitting display apparatus of claim 1, wherein the first dummy conductive pattern comprises a light-transmitting conductive material.

16. A method of manufacturing an organic light-emitting display apparatus, the method comprising:

forming a thin film transistor (TFT) comprising an active layer, a gate electrode overlapping a gate region of the active layer, a source electrode overlapping a source region of the active layer, and a drain electrode overlapping a drain region of the active layer on a substrate;

forming a first electrode electrically connected to one of the source electrode or the drain electrode;

forming a first dummy conductive pattern overlapping a dummy region of the active layer between the gate region and one of the source region or the drain region corresponding to the one of the source electrode or the drain electrode;

forming an intermediate layer on the first electrode and comprising at least an organic emission layer; and

forming a second electrode on the intermediate layer.

17. The method of claim 16, further comprising forming a storage capacitor electrically connected to the TFT, wherein the first dummy conductive pattern comprises a same material and is in a same layer as a terminal of the storage capacitor.

18. The method of claim 16, further comprising forming a second dummy conductive pattern overlapping the first dummy conductive pattern.

19. The method of claim 18, wherein the second dummy conductive pattern comprises a same material and is in a same layer as the source electrode or the drain electrode.

20. The method of claim 18, wherein the second dummy conductive pattern is separated from the source electrode and the drain electrode.