Monolithic composite III-nitride transistor with high voltage group IV enable switch

• US 9,184,243 B2
• Filed: 07/09/2014
• Issued: 11/10/2015
• Est. Priority Date: 07/12/2013
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Briere, Michael A.
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US14/327,495
• Publication Number:
  US 20150014740A1
• Time in Patent Office: 489 Days
• Field of Search: 257/133
• US Class Current: 1/1
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0694 comprising components formed on opposite sides of a semiconductor substrate
• CPC Class Codes: H01L 27/085 including field-effect components only
• CPC Class Codes: H01L 27/0883 Combination of depletion and enhancement field effect transistors
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H02H 7/10 for converters; for rectifiers forming part of the control circuit of the converter, see the relevant group in H02M
• CPC Class Codes: H02M 3/1588 comprising at least one synchronous rectifier element H02M3/1582, H02M3/1584 take precedence
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement mode group IV transistor and two or more depletion mode III-Nitride transistors. The enhancement mode group IV transistor may be implemented as a group IV insulated gate bipolar transistor (group IV IGBT). One or more of the III-Nitride transistor(s) may be situated over a body layer of the group IV IGBT, or the III-Nitride transistor(s) may be situated over a collector layer of the IGBT.

Claims

1. A monolithically integrated component comprising:

an enhancement mode group IV transistor; and

at least two depletion mode III-Nitride transistors;

at least one of said at least two depletion mode III-Nitride transistors substantially overlying said enhancement mode group IV transistor.

2. The monolithically integrated component of claim 1, wherein said enhancement mode group IV transistor comprises a silicon insulated gate bipolar transistor (silicon IGBT).

3. The monolithically integrated component of claim 2, further comprising:

a body layer of said enhancement mode group IV IGBT having an emitter and a gate therein;

a drift, layer of said enhancement mode group IV IGBT;

a collector layer of said enhancement mode group IV IGBT having a collector therein;

wherein said at least two depletion mode III-Nitride transistors are situated over said body layer of said enhancement mode group IV IGBT;

and wherein said emitter and said gate of said enhancement mode group IV IGBT are situated on a top side of said monolithically integrated component.

4. The monolithically integrated component of claim 2, further comprising:

a body layer of said enhancement mode group IV IGBT having an emitter and a gate therein;

a drift layer of said enhancement mode group IV IGBT;

a collector layer of said enhancement mode group IV IGBT having a collector therein;

wherein said at least two depletion mode III-Nitride transistors are situated over said collector layer of said enhancement mode group IV IGBT;

and wherein said collector of said enhancement mode group IV IGBT is situated on a top side of said monolithically integrated component.

5. The monolithically integrated component of claim 1, wherein said enhancement mode group IV transistor comprises a silicon field-effect transistor (silicon PET).

6. The monolithically integrated component of claim 1, wherein said at least two depletion mode III-Nitride transistors comprise III-Nitride FETs.

7. The monolithically integrated component of claim 1, wherein said at least two depletion mode HI-Nitride transistors comprise III-Nitride high electron mobility transistors (III-Nitride HEMTs).

8. The monolithically integrated component of claim 1, wherein said at least two depletion mode III-Nitride transistors comprise a III-Nitride transition layer.

9. The monolithically integrated component of claim 8, further comprising a III-Nitride nucleation layer, said III-Nitride transition layer being formed over said III-Nitride nucleation layer.

10. The monolithically integrated component of claim 1, wherein said at least two depletion mode III-Nitride transistors form a power conversion circuit.

11. The monolithically integrated component of claim 10, wherein said enhancement mode group IV transistor comprises a FET.

12. The monolithically integrated component of claim 10, wherein said enhancement mode group IV transistor comprises an IGBT.

13. The monolithically integrated component of claim 1, wherein said at least two depletion mode III-Nitride transistors form at least one half bridge circuit.

14. The monolithically integrated component of claim 13, wherein said at least one half bridge circuit is configured as a power conversion circuit.

15. The monolithically integrated component of claim 1, wherein monolithic integration is based on III-Nitride epitaxial layers formed on a silicon substrate.

16. The monolithically integrated component of claim 15, wherein said enhancement mode group IV transistor is situated on and/or within said silicon substrate.

17. The monolithically integrated component of claim 1, wherein said enhancement mode group IV transistor is configured as an enable switch.

18. The monolithically integrated component of claim 1, wherein at least one of said at least two depletion mode III-Nitride transistors is electrically connected to said enhancement mode group IV transistor using at least one interconnect via.

19. The monolithically integrated component of claim 1, wherein at least one of said at least two depletion mode III-Nitride transistors further comprises an insulated gate electrode.

20. The monolithically integrated component of claim 1, wherein at least one of said at least two depletion mode III-Nitride transistors is electrically connected to said enhancement mode group IV transistor using at least one through substrate via.