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Monolithic composite III-nitride transistor with high voltage group IV enable switch

  • US 9,184,243 B2
  • Filed: 07/09/2014
  • Issued: 11/10/2015
  • Est. Priority Date: 07/12/2013
  • Status: Active Grant
First Claim
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1. A monolithically integrated component comprising:

  • an enhancement mode group IV transistor; and

    at least two depletion mode III-Nitride transistors;

    at least one of said at least two depletion mode III-Nitride transistors substantially overlying said enhancement mode group IV transistor.

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