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Semiconductor device having field plate electrode and method for manufacturing the same

  • US 9,184,261 B2
  • Filed: 12/12/2013
  • Issued: 11/10/2015
  • Est. Priority Date: 02/09/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a second semiconductor layer of a first conductivity type on a first semiconductor layer of the first conductivity type;

    forming a trench in the second semiconductor layer;

    forming a first conductive film in the trench through a first insulating film so as to bury the trench;

    removing the first insulating film of the upper portion of the trench on an opening side of the trench;

    oxidizing the side surface of the upper portion of the exposed trench and the entire upper portion of the exposed first conductive film so as to form a gate insulating film and a second insulating film;

    forming a gate electrode between the gate insulating film and the second insulating film;

    forming a third semiconductor layer of the second conductivity type in the upper portion of the second semiconductor layer; and

    forming a fourth semiconductor layer of the first conductivity type in the upper portion of the third semiconductor layer.

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