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Semiconductor device having dual parallel channel structure and method of fabricating the same

  • US 9,184,280 B2
  • Filed: 08/06/2013
  • Issued: 11/10/2015
  • Est. Priority Date: 01/14/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate arranged along side walls of a trench;

    a gate oxide layer between the side walls of the trench and the gate and between a bottom surface of the trench and the gate;

    a first source region disposed to face an upper portion of the gate, the first source region being doped to a first conduction type;

    a second source region on the bottom surface of the trench, the second source region being of the first conduction type;

    a first well region on a lower surface of the first source region; and

    a second well region on a lower surface of the second source region, the first and second well regions doped to a second conduction type, the second conduction type being electrically opposite to the first conduction type.

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