Semiconductor device having dual parallel channel structure and method of fabricating the same
First Claim
1. A semiconductor device, comprising:
- a gate arranged along side walls of a trench;
a gate oxide layer between the side walls of the trench and the gate and between a bottom surface of the trench and the gate;
a first source region disposed to face an upper portion of the gate, the first source region being doped to a first conduction type;
a second source region on the bottom surface of the trench, the second source region being of the first conduction type;
a first well region on a lower surface of the first source region; and
a second well region on a lower surface of the second source region, the first and second well regions doped to a second conduction type, the second conduction type being electrically opposite to the first conduction type.
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Accused Products
Abstract
A semiconductor device may include a substrate having a drift region doped to a first conduction type. A trench may be etched into an upper surface of the substrate. A gate may be arranged along side walls of the trench. A gate oxide layer may be between the side walls of the trench and gate and between a bottom surface of the trench and gate. A first source region of the first conduction type may be on the upper surface of the substrate. A second source region of the first conduction type may be on the bottom surface of the trench. A first well region may be between the first source region and drift region, and a second well region may be between the second source region and drift region, the first and second well regions being doped to a second conduction type (electrically opposite to the first conduction type).
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Citations
14 Claims
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1. A semiconductor device, comprising:
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a gate arranged along side walls of a trench; a gate oxide layer between the side walls of the trench and the gate and between a bottom surface of the trench and the gate; a first source region disposed to face an upper portion of the gate, the first source region being doped to a first conduction type; a second source region on the bottom surface of the trench, the second source region being of the first conduction type; a first well region on a lower surface of the first source region; and a second well region on a lower surface of the second source region, the first and second well regions doped to a second conduction type, the second conduction type being electrically opposite to the first conduction type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification