Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories

• US 9,184,375 B1
• Filed: 12/02/2014
• Issued: 11/10/2015
• Est. Priority Date: 07/03/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Tang, Xueti, Lee, Jangeun
• Primary Examiner(s): Armand, Marc
• Application Number:
  US14/558,145
• Time in Patent Office: 343 Days
• Field of Search: 257/421
• US Class Current: 1/1
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Claims

1. A magnetic junction for use in a magnetic device comprising:

a pinned layer;

a nonmagnetic spacer layer;

an asymmetric free layer, the nonmagnetic spacer layer residing between the pinned layer and the asymmetric free layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent; and

a perpendicular magnetic anisotropy (PMA) inducing layer, the free layer being between the PMA inducing layer and the asymmetric free layer;

wherein the magnetic junction is configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

2. The magnetic junction of claim 1 wherein the free layer further includes a nonmagnetic insertion layer between the first ferromagnetic layer and the second ferromagnetic layer.

3. The magnetic junction of claim 2 wherein the nonmagnetic insertion layer includes at least one of Bi, Ta, W, V, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr.

4. The magnetic junction of claim 1 wherein the first boron content is at greater than twenty atomic percent and less than fifty atomic percent and wherein the second boron content is not more than twenty atomic percent.

5. The magnetic junction of claim 4 wherein the first boron content is at least twenty-five atomic percent and not more than forty-five atomic percent.

6. The magnetic junction of claim 5 wherein first ferromagnetic layer and the second ferromagnetic layer each contain at least one of Co and Co Fe.

7. The magnetic junction of claim 1 wherein the second ferromagnetic layer is between the first ferromagnetic layer and the pinned layer.

8. The magnetic junction of claim 1 further comprising:

a magnetic insertion layer between the nonmagnetic spacer layer and the free layer.

9. The magnetic junction of claim 1 further comprising:

a boron sink layer, the PMA inducing layer being between the free layer and the boron sink layer.

10. The magnetic junction of claim 1 wherein the nonmagnetic spacer layer and the PMA inducing layer each include MgO.

11. The magnetic junction of claim 1 further comprising:

an additional pinned layer, the PMA inducing layer residing between the free layer and the additional pinned layer, the PMA inducing layer being a nonmagnetic spacer layer.

12. A magnetic device including a magnetic memory and comprising:

a plurality of magnetic storage cells for the magnetic memory, each of the plurality of magnetic storage cells including at least one magnetic junction, each of the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer, and a perpendicular magnetic anisotropy (PMA) inducing layer, the nonmagnetic spacer layer being between the free layer and the pinned layer, the free layer being between the nonmagnetic spacer layer and the PMA inducing layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent, the magnetic junction being configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and

a plurality of bit lines coupled with the plurality of magnetic storage cells.

13. The magnetic memory of claim 12 wherein the free layer further includes a nonmagnetic insertion layer between the first ferromagnetic layer and the second ferromagnetic layer.

14. The magnetic memory of claim 13 wherein the nonmagnetic insertion layer includes at least one of Bi, Ta, W, V, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr.

15. The magnetic memory of claim 12 wherein the first boron content is at greater than twenty-five atomic percent and less than forty-five atomic percent and wherein the second boron content is not more than twenty atomic percent.

16. The magnetic memory of claim 12 wherein first ferromagnetic layer and the second ferromagnetic layer each contain at least one of Co and CoFe.

17. The magnetic memory of claim 12 wherein the second ferromagnetic layer is between the first ferromagnetic layer and the pinned layer.

18. The magnetic memory of claim 12 wherein each of the at least one magnetic junction further includes at least one of a magnetic insertion layer and a boron sink layer, the magnetic insertion layer being between the nonmagnetic spacer layer and the free layer, the PMA inducing layer being between the free layer and the boron sink layer.

19. The magnetic memory of claim 12 wherein each of the at least one magnetic junction further includes

an additional pinned layer, the PMA inducing layer residing between the free layer and the additional pinned layer, the PMA inducing layer being a nonmagnetic spacer layer.

20. A method for providing a magnetic junction for use in a magnetic device comprising:

providing a pinned layer;

providing a nonmagnetic spacer layer;

providing an asymmetric free layer, the nonmagnetic spacer layer residing between the pinned layer and the asymmetric free layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent; and

providing a perpendicular magnetic anisotropy (PMA) inducing layer, the free layer being between the PMA inducing layer and the asymmetric free layer;

wherein the magnetic junction is configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.