Laser diodes with an etched facet and surface treatment
First Claim
Patent Images
1. A laser diode device comprising:
- a substrate having a gallium- and nitrogen-containing surface, the substrate comprising a surface region and at least a first edge region; and
a laser stripe overlying a portion of the surface region of the substrate, the laser stripe characterized by a length in a length direction, a first end, and a second, opposite end, the length direction being substantially orthogonal to the first edge region of the substrate, the laser stripe comprising;
an n-type cladding region overlying the surface region of the substrate;
an active region overlying the n-type cladding region, the active region comprising a quantum well structure or a double hetero-structure; and
a p-type cladding region overlying the active region;
wherein the first end of the laser stripe comprises a first etched facet, and the second end of the laser stripe comprises a second etched facet, the first etched facet having a primary emission surface, the first etched facet being substantially parallel to and recessed from the first edge region of the substrate in the length direction, the first etched facet including a first portion of the n-type cladding region, and the first edge region including a second portion of the n-type cladding region;
wherein the laser stripe is operable to emit electromagnetic radiation in a wavelength range selected from a first range from about 400 nm to about 435 nm, a second range from about 435 nm to about 480 nm, a third range from about 480 nm to about 505 nm, and a fourth range from about 505 nm to about 550 nm, and wherein the first edge region of the substrate comprises a first surface-treated region configured to interact with the electromagnetic radiation emitted by the laser stripe and propagating in the substrate.
3 Assignments
0 Petitions
Accused Products
Abstract
A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
77 Citations
25 Claims
-
1. A laser diode device comprising:
-
a substrate having a gallium- and nitrogen-containing surface, the substrate comprising a surface region and at least a first edge region; and a laser stripe overlying a portion of the surface region of the substrate, the laser stripe characterized by a length in a length direction, a first end, and a second, opposite end, the length direction being substantially orthogonal to the first edge region of the substrate, the laser stripe comprising; an n-type cladding region overlying the surface region of the substrate; an active region overlying the n-type cladding region, the active region comprising a quantum well structure or a double hetero-structure; and a p-type cladding region overlying the active region; wherein the first end of the laser stripe comprises a first etched facet, and the second end of the laser stripe comprises a second etched facet, the first etched facet having a primary emission surface, the first etched facet being substantially parallel to and recessed from the first edge region of the substrate in the length direction, the first etched facet including a first portion of the n-type cladding region, and the first edge region including a second portion of the n-type cladding region; wherein the laser stripe is operable to emit electromagnetic radiation in a wavelength range selected from a first range from about 400 nm to about 435 nm, a second range from about 435 nm to about 480 nm, a third range from about 480 nm to about 505 nm, and a fourth range from about 505 nm to about 550 nm, and wherein the first edge region of the substrate comprises a first surface-treated region configured to interact with the electromagnetic radiation emitted by the laser stripe and propagating in the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A laser diode device comprising:
-
a substrate having a gallium- and nitrogen-containing surface, the substrate comprising a surface region and at least a first edge region; and a laser stripe overlying a portion of the surface region of the substrate, the laser stripe characterized by a length in a length direction, a first end, and a second, opposite end, the length direction being substantially orthogonal to the first edge region of the substrate, the laser stripe comprising; an n-type cladding region overlying the surface region of the substrate; an active region overlying the n-type cladding region, the active region comprising a quantum well structure or a double hetero-structure; and a p-type cladding region overlying the active region; wherein the first end of the laser stripe comprises a first etched facet, and the second end of the laser stripe comprises a second etched facet, the first etched facet having a primary emission surface, the first etched facet being substantially parallel to and recessed from the first edge region of the substrate in the length direction by a length ranging from about 0.5 μ
m to about 100 μ
m, the first etched facet including a first portion of the n-type cladding region, and the first edge region including a second portion of the n-type cladding region;wherein the laser stripe is operable to emit electromagnetic radiation at a wavelength ranging from about 425 nm to about 485 nm or from about 500 nm to about 550 nm, and wherein the first edge region of the substrate comprises a first surface-treated region configured to interact with the electromagnetic radiation emitted by the laser stripe and propagating in the substrate, the first surface-treated region comprising one of a reflector, an absorber, or a scatterer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeKyocera SLD Laser Incorporated (Kyocera Corporation)
-
Original AssigneeSoraa Laser Diode, Inc. (Kyocera Corporation)
-
InventorsRaring, James W., Schmidt, Mathew C., Ellis, Bryan
-
Primary Examiner(s)Zhang, Yuanda
-
Application NumberUS14/010,326Time in Patent Office806 DaysField of Search372/45.01, 372/46.01, 372/49.01US Class Current1/1CPC Class CodesH01S 2301/02 ASE (amplified spontaneous ...H01S 2301/17 Semiconductor lasers compri...H01S 5/0202 CleavingH01S 5/0203 EtchingH01S 5/1082 with a special facet struct...H01S 5/22 having a ridge or stripe st...H01S 5/2201 in a specific crystallograp...H01S 5/32025 non-polar orientationH01S 5/320275 semi-polar orientationH01S 5/32341 blue laser based on GaN or GaPH01S 5/34333 with a well layer based on ...
