Method for manufacturing semiconductor device

• US 9,187,315 B2
• Filed: 08/01/2014
• Issued: 11/17/2015
• Est. Priority Date: 01/08/2014
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Sato, Kimitoshi
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): STEVENSON, ANDRE C
• Application Number:
  US14/449,633
• Publication Number:
  US 20150191347A1
• Time in Patent Office: 473 Days
• US Class Current: 1/1
• CPC Class Codes: B81C 1/00166 Electrodes
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer

Abstract

A method for manufacturing a semiconductor device includes: simultaneously forming first and second well regions on a semiconductor substrate, wherein the second well region becomes a fixed electrode; simultaneously forming a first gate insulating film on the first well region and a fixed electrode protective film on the second well region; simultaneously forming a floating gate electrode on the first gate insulating film and a sacrificial film on the fixed electrode protective film; simultaneously forming a second gate insulating film on the floating gate electrode and a movable electrode protective film on the sacrificial film; simultaneously forming a gate electrode on the second gate insulating film and a movable electrode on the movable electrode protective film; removing the sacrificial film to form a void by; and vacuum-sealing the void to form a vacuum chamber.

Claims

1. A method for manufacturing a semiconductor device comprising:

simultaneously forming first and second well regions on a semiconductor substrate, wherein the second well region becomes a fixed electrode;

simultaneously forming a first gate insulating film on the first well region and a fixed electrode protective film on the second well region;

simultaneously forming a floating gate electrode on the first gate insulating film and a sacrificial film on the fixed electrode protective film;

simultaneously forming a second gate insulating film on the floating gate electrode and a movable electrode protective film on the sacrificial film;

simultaneously forming a gate electrode on the second gate insulating film and a movable electrode on the movable electrode protective film;

removing the sacrificial film to form a void by;

vacuum-sealing the void to form a vacuum chamber;

forming an inter-layer insulating film covering the gate electrode and the movable electrode; and

removing the sacrificial film with the gate electrode and the movable electrode covered with the inter-layer insulating film.

2. The method according to claim 1, further comprising forming a shield film connected to a grounding potential on the movable electrode via an insulating film before the inter-layer insulating film is formed.

3. The method according to claim 2, further comprising etching the inter-layer insulating film on the movable electrode to form a movable electrode opening,

wherein the shield film functions as an etching stopper when the movable electrode opening is formed.

7. The method according to claim 1, further comprising:

forming a field oxide film around the second well region;

forming an etching hole in the inter-layer insulating film on the field oxide film; and

introducing an etchant through the etching hole to etch and remove the sacrificial film.

8. The method according to claim 7, further comprising forming a sacrificial film protective film of a same material as a material of the movable electrode on the sacrificial film between the movable electrode and the etching holes simultaneously with the movable electrode.

9. The method according to claim 7, wherein the etching hole is formed at mutually opposing both ends of the movable electrode.

10. The method according to claim 9, comprising:

forming lead wires respectively connected to the second well region and the movable electrode are formed at mutually opposing both ends of the movable electrode; and

forming the etching hole next to the lead wires.

11. The method according to claim 7, wherein the movable electrode includes a plurality of electrodes connected and arranged in an array shape, and the etching hole is formed at one central location of the plurality of electrodes.

12. The method according to claim 7, further comprising:

forming a first sealing film on the inter-layer insulating films and in the etching hole;

etching the first sealing film and the inter-layer insulating films around the etching hole to form a sealing region opening; and

forming a second sealing film in the sealing region opening.

13. The method according to claim 1, wherein a detection pressure sensor and a reference pressure sensor are formed of the second well region, the fixed electrode protective film, the movable electrode protective film, the movable electrode, and the vacuum chamber, and

in the detection pressure sensor, the inter-layer insulating film on the movable electrode is left open.

14. The method according to claim 13, wherein the movable electrode is supported by a plurality of movable electrode anchors in the detection pressure sensor, and the movable electrode is supported by the movable electrode anchors and reference electrode anchors arranged between the movable electrode anchors in the reference pressure sensor.

15. The method according to claim 13, wherein the inter-layer insulating film remains without being opened in the reference pressure sensor.

16. The method according to claim 1, wherein the movable electrode includes a plurality of electrodes, the second well region includes a plurality of well regions, the plurality of electrodes and the plurality of well regions are respectively connected in parallel via wirings.

17. The method according to claim 1, wherein the movable electrode is circular.

4. A method for manufacturing a semiconductor device comprising:

simultaneously forming first and second well regions on a semiconductor substrate, wherein the second well region becomes a fixed electrode;

simultaneously forming a first gate insulating film on the first well region and a fixed electrode protective film on the second well region;

simultaneously forming a floating gate on the first gate insulating film and a sacrificial film on the fixed electrode protective film;

simultaneously forming a second gate insulating film on the floating gate electrode and a movable electrode protective film on the sacrificial film;

simultaneously forming a gate electrode on the second gate insulating film and a movable electrode on the movable electrode protective film;

removing the sacrificial film to form a void by; and

vacuum-sealing the void to form a vacuum chamber,

wherein the movable electrode is supported by a plurality of movable electrode anchors,

the movable electrode includes a movable electrode detection region and a movable electrode compensation region located on a perimeter of the movable electrode detection region, and

an interval between the movable electrode anchors in the movable electrode compensation region is smaller than an interval between the movable electrode anchors in the movable electrode detection region.

5. The method according to claim 4, further comprising forming a field oxide film around the second well region,

wherein the movable electrode compensation region is formed on the field oxide film.

6. The method according to claim 4, wherein the second well region is not formed right below the movable electrode compensation region.