Power spectrum analysis for defect screening in integrated circuit devices

• US 9,188,622 B1
• Filed: 12/01/2011
• Issued: 11/17/2015
• Est. Priority Date: 12/01/2011
• Status: Active Grant

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Tangyunyong, Paiboon, Cole, Edward I. Jr., Stein, David J.
• Primary Examiner(s): Natalini, Jeff
• Application Number:
  US13/309,281
• Time in Patent Office: 1,447 Days
• US Class Current: 1/1
• CPC Class Codes: G01R 27/28 Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response in line transmission systems H04B3/46
• CPC Class Codes: G01R 31/26 Testing of individual semiconductor devices testing or measuring during manufacture or treatment H01L22/00; testing of photovoltaic devices H02S50/10
• CPC Class Codes: G01R 31/31721 Power aspects, e.g. power supplies for test circuits, power saving during test for scan test G01R31/318575

Abstract

A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

Claims

1. A method of screening defects in a sample of a device, comprising:

supplying a time-varying electrical signal to the sample between a power pin and a ground pin of the sample, wherein the time-varying electrical signal is periodic and has a sine-wave, square-wave, or periodic chirp waveform;

measuring a power spectrum at a selected one of a plurality of pins of the sample wherein the measured power spectrum represents a response of the sample solely to said time-varying electrical signal and wherein, while measuring the power spectrum, each pin of the device other than the selected pin and the ground and power pins is floating or else biased at constant voltage; and

identifying an indication of a defect in the sample based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

2. The method of claim 1, further comprising:

enhancing the indication of the defect by exposing the sample to an energetic beam.

3. The method of claim 2, wherein the energetic beam is a laser beam, X-ray beam, an electron beam, or an ion beam.

4. The method of claim 1, further comprising:

accelerating formation of defects in the sample by subjecting the sample to a reliability test until the sample fails;

storing the power spectrum of the sample taken before the reliability test as a failure precursor; and

using the failure precursor to identify device samples that are likely to fail in the reliability test.

5. The method of claim 1, wherein the indication comprises one or more of the following:

a location of a peak, a shape of a frequency component, and an amplitude of the frequency component.

6. The method of claim 1, wherein the one or more power spectra of the device comprise a spectrum generated by theoretical modeling.

7. The method of claim 1, wherein the pin selected for measuring the power spectrum is the power pin.

8. A system for analyzing a sample of a device, comprising:

a signal generator configured to supply a time-varying electrical signal between a power pin of the sample and a ground pin of the sample, wherein the time-varying electrical signal is periodic and has a sine-wave, square-wave, or periodic chirp waveform;

a spectrum analyzer configured to measure a power spectrum at a selected one of a plurality of pins of the sample wherein the measured power spectrum represents a response of the sample solely to the time-varying electrical signal and wherein, while measuring the power spectrum, each pin of the device other than the selected pin and the ground and power pins is floating or else biased at constant voltage; and

a computer system to identify an indication of a defect in the sample based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

9. The system of claim 8, further comprising:

an energetic beam source to inject an energetic beam to the sample to thereby enhance the indication of the defect.

10. The system of claim 9, wherein the energetic beam is a laser beam, X-ray beam, an electron beam, or an ion beam.

11. The system of claim 8, wherein the one or more power spectra of the device comprise a spectrum generated by theoretical modeling.

12. The method of claim 8, wherein the spectrum analyzer is configured to measure the power spectrum at the power pin of the sample.

13. A method of screening a sample electronic device, comprising:

applying a periodic voltage signal between a power pin and a ground pin of the sample device;

measuring a power spectrum at a selected one of a plurality of pins of the sample device wherein the measured power spectrum represents a response of the sample solely to the applied periodic voltage, and wherein during the power spectrum measurement, each pin of the device other than the selected pin and the ground and power pins is floating, biased at constant voltage, or coupled through a load resistor to a constant voltage;

comparing the measured power spectrum to reference data, thereby to produce a comparison result; and

classifying the sample electronic device according to the comparison result.

14. The method of claim 13, wherein the periodic voltage has a sinusoidal, square-wave, or periodic chirp waveform.

15. The method of claim 13, wherein the periodic voltage is a sinusoid or square wave that toggles with full-rail amplitude.

16. The method of claim 13, wherein all pins of the device except for the selected pin and the power and ground pins are floating during the power spectrum measurement.

17. The method of claim 13, wherein all input pins of the device are biased at a constant voltage during the power spectrum measurement.

18. The method of claim 13, wherein the measured power spectrum is compared with one or more power spectra of a device or devices that have a known defect status, and wherein the classifying step comprises identifying a defect in the sample device based on the comparison.