Performance based power management of a memory and a data storage system using the memory
First Claim
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1. An integrated circuit, comprising:
- a memory circuit including a memory array;
a memory control unit that issues access requests to the memory circuit;
a power control circuit, coupled to the memory circuit, for controlling power supplied to the memory array and for controlling access to the memory array, wherein the power control circuit supplies the memory array with a supply voltage corresponding to one of a plurality of memory performance levels including a full performance level and at least one power-saving performance level; and
a power status feedback unit including a voltage sensing circuit coupled to the memory array for sensing a voltage level of the memory array, wherein the voltage sensing circuit generates a power status signal indicating one of the plurality of memory performance levels of the memory array depending upon the sensed voltage level, and wherein the power control circuit permits the access to the memory array depending upon the power status signal,wherein the power status feedback unit further comprises a switch controller that processes the power status signal to generate a final power status signal for output to at least one of the power control circuit and the memory control unit; and
wherein the voltage sensing circuit and the switch controller are located in an always-on voltage domain such that they are operable in any one of the plurality of power-saving performance levels.
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Abstract
Power control circuitry for a data processor supplies a memory array with a supply voltage corresponding to a memory performance level. The performance levels include a full performance level and a power-saving performance level. Voltage sensing circuitry senses a voltage level of the memory array and outputs a power status signal. The power status signal is used to determine when the memory array is awake and can be accessed.
36 Citations
17 Claims
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1. An integrated circuit, comprising:
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a memory circuit including a memory array; a memory control unit that issues access requests to the memory circuit; a power control circuit, coupled to the memory circuit, for controlling power supplied to the memory array and for controlling access to the memory array, wherein the power control circuit supplies the memory array with a supply voltage corresponding to one of a plurality of memory performance levels including a full performance level and at least one power-saving performance level; and a power status feedback unit including a voltage sensing circuit coupled to the memory array for sensing a voltage level of the memory array, wherein the voltage sensing circuit generates a power status signal indicating one of the plurality of memory performance levels of the memory array depending upon the sensed voltage level, and wherein the power control circuit permits the access to the memory array depending upon the power status signal, wherein the power status feedback unit further comprises a switch controller that processes the power status signal to generate a final power status signal for output to at least one of the power control circuit and the memory control unit; and wherein the voltage sensing circuit and the switch controller are located in an always-on voltage domain such that they are operable in any one of the plurality of power-saving performance levels. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of controlling access to a memory in an integrated circuit, the integrated circuit including a memory, a processor, and a power management controller having a voltage sensing circuit, the method comprising:
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supplying the memory with a supply voltage corresponding to one of a plurality of memory performance levels including a full performance level and at least one power-saving performance level; sensing a voltage level of a memory array of the memory with the voltage sensing circuit; detecting, by the voltage sensing circuit, a voltage disturbance including a voltage dip of more than a predetermined minimum value, and using a counter to determine whether a duration of the voltage dip is greater than or equal to a threshold duration likely to result in data loss from memory; generating a power status signal for the memory array indicating one of the plurality of memory performance levels of the memory depending upon the sensed voltage level and the duration of the voltage dip; and permitting a memory access operation depending upon the value of the power status signal.
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17. A controller for controlling access to a memory array of a memory circuit, comprising:
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a voltage sensing circuit for receiving a sensed voltage level of the memory array; a power management controller connected to the voltage sensing circuit for generating a power status signal indicating one of a plurality of memory performance levels of the memory circuit including a full performance level and at least one power-saving performance level, depending upon the sensed voltage level, and for permitting a memory access operation depending upon the value of the power status signal; and a counter connected to the voltage sensing circuit, wherein if the voltage sensing circuit detects a voltage disturbance including a voltage dip of more than a predetermined minimum value, then the counter, upon detection of the voltage dip, performs a count to establish whether the duration of the dip is greater than or equal to a threshold duration likely to result in data loss from memory.
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Specification