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Method and system for heterogeneous substrate bonding for photonic integration

  • US 9,190,400 B2
  • Filed: 12/19/2013
  • Issued: 11/17/2015
  • Est. Priority Date: 10/13/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a hybrid integrated optical device, the method comprising:

  • providing a substrate comprising a silicon layer;

    providing a compound semiconductor device;

    forming a bonding region disposed between the silicon layer and the compound semiconductor device, wherein the bonding region comprises;

    a metal-semiconductor bond at a first portion of the bonding region, wherein the metal-semiconductor bond includes a first pad bonded to the silicon layer, a bonding metal bonded to the first pad, and a second pad bonded to the bonding metal and the compound semiconductor device; and

    an interface assisted bond at a second portion of the bonding region, wherein the interface assisted bond includes an interface layer positioned between the silicon layer and the compound semiconductor device, wherein the interface assisted bond provides an ohmic contact between the silicon layer and the compound semiconductor device.

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