Semiconductor device and method for manufacturing the same
First Claim
1. A display device comprising:
- a pixel portion over a substrate; and
a driver circuit portion over the substrate,wherein the driver circuit portion comprises;
a first gate electrode layer;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the gate insulating layer, the first oxide semiconductor layer being in contact with the gate insulating layer and including a channel formation region;
an oxide insulating layer over the first oxide semiconductor layer;
an insulating layer over the oxide insulating layer; and
a second gate electrode layer over the insulating layer, the second gate electrode layer overlapping the channel formation region.
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Abstract
A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
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Citations
20 Claims
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1. A display device comprising:
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a pixel portion over a substrate; and a driver circuit portion over the substrate, wherein the driver circuit portion comprises; a first gate electrode layer; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer, the first oxide semiconductor layer being in contact with the gate insulating layer and including a channel formation region; an oxide insulating layer over the first oxide semiconductor layer; an insulating layer over the oxide insulating layer; and a second gate electrode layer over the insulating layer, the second gate electrode layer overlapping the channel formation region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a pixel portion over a substrate; and a driver circuit portion over the substrate, wherein the driver circuit portion comprises; a first gate electrode layer; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer, the first oxide semiconductor layer being in contact with the gate insulating layer and including a channel formation region; a source electrode layer and a drain electrode layer over the first oxide semiconductor layer; an oxide insulating layer over the first oxide semiconductor layer, the source electrode layer and the drain electrode layer; and a second gate electrode layer over the oxide insulating layer, the second gate electrode layer overlapping the channel formation region, wherein the first gate electrode layer and the second gate electrode layer have a light-transmitting property. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A display device comprising:
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a pixel portion over a substrate; and a driver circuit portion over the substrate, wherein the driver circuit portion comprises; a first gate electrode layer; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer, the first oxide semiconductor layer being in contact with the gate insulating layer and including a channel formation region; a source electrode layer and a drain electrode layer over the first oxide semiconductor layer; an oxide insulating layer over the first oxide semiconductor layer, the source electrode layer and the drain electrode layer; and a second gate electrode layer over the oxide insulating layer, the second gate electrode layer overlapping the channel formation region, wherein each of the source electrode layer and the drain electrode layer includes a metal. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification