Semiconductor component with a drift region and a drift control region

• US 9,190,511 B2
• Filed: 06/11/2013
• Issued: 11/17/2015
• Est. Priority Date: 07/27/2005
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Pfirsch, Frank, Mauder, Anton, Willmeroth, Armin, Schulze, Hans-Joachim, Sedlmaier, Stefan, Zundel, Markus, Hirler, Franz, Mittal, Arunjai
• Primary Examiner(s): Rodela, Eduardo A
• Assistant Examiner(s): Roland, Christopher M
• Application Number:
  US13/915,277
• Publication Number:
  US 20140001528A1
• Time in Patent Office: 889 Days
• Field of Search: 257/300, 257/328, 257/341, 257/E29.012, 257/E29.257, 257/E21.418
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

Claims

1. A semiconductor device, comprising:

a semiconductor body;

a drift zone of a first doping type in the semiconductor body, a drift control zone comprising a semiconductor material and arranged in the semiconductor body at least partially adjacent the drift zone;

an accumulation dielectric arranged between the drift zone and the drift control zone;

a first device zone and a second device zone distant to the first device zone, wherein the drift zone is arranged between the first device zone and the second device zone; and

a capacitive component connected between the drift control zone and the first device zone,

wherein the drift control zone is electrically coupled to the second device zone through a rectifier element.

2. The semiconductor device of claim 1,

wherein the drift control zone is coupled to the first device zone through a rectifier element.

3. The semiconductor device of claim 1,

wherein the drift control zone comprises a contact electrode;

and

wherein the capacitive component is connected between the contact electrode and the first device zone.

4. The semiconductor device of claim 3, wherein a doped contact zone that is doped complementarily to the drift control zone is arranged between the drift control zone and the contact electrode.

5. The semiconductor device of claim 4, wherein the contact zone adjoins the contact electrode and a dielectric of the capacitive component.

6. The semiconductor device of claim 1, wherein the drift control zone and the drift zone have the same doping type.

7. The semiconductor device of claim 1, wherein the drift zone and the drift control zone have complementary doping types.

8. The semiconductor device of claim 1, wherein the capacitive component is integrated in the semiconductor body.

9. The semiconductor device of claim 8, wherein the capacitive component comprises a dielectric that is different from the accumulation dielectric.

10. The semiconductor device of claim 1, that is implemented as a MOS transistor in which the first device zone is a body zone and the second device zone is a drain zone, and that further comprises:

a source zone separated from the drift zone by the body zone; and

a gate electrode that is dielectrically insulated from the semiconductor body by a gate dielectric and that is adjacent the body zone.

11. The semiconductor device of claim 10,

wherein the body zone and the source zone are connected through a source electrode and a doped semiconductor zone of the same doping type as the body zone but more highly doped;

and

wherein the capacitive component is connected to the source electrode.

12. The semiconductor device of claim 10,

wherein the drain zone and the drift zone have the same doping type, or

wherein the drain zone is doped complementarily to the drift zone.

13. The semiconductor device of claim 10 that is implemented as a MOSFET in which the drift zone is doped complementarily to the source zone.

14. The semiconductor device of claim 13, in which an intermediate zone of the same doping type as the source zone is arranged between the drift zone and the body zone.

15. The semiconductor device of claim 14, wherein the drift control zone is electrically coupled to the gate electrode.

16. The semiconductor device of claim 15, wherein the drift control zone is coupled to the gate electrode via a rectifier element.

17. The semiconductor device of claim 10, further comprising:

a drain electrode contacting the drain zone; and

a doped semiconductor zone located between the drain electrode and the drift zone.

18. A semiconductor device comprising:

a semiconductor body;

a drift zone of a first doping type in the semiconductor body, a drift control zone comprising a semiconductor material and arranged in the semiconductor body at least partially adjacent the drift zone, and an accumulation dielectric arranged between the drift zone and the drift control zone;

a body zone and a drain zone distant to the body zone, wherein the drift zone is arranged between the body zone and the drain zone;

a gate electrode that is dielectrically insulated from the semiconductor body by a gate dielectric and that is adjacent the body zone;

a drain electrode directly contacting the drain zone; and

a semiconductor zone doped complementarily to the drain zone and arranged between the drain electrode and the drift zone,

wherein the semiconductor zone doped complementarily to the drain zone directly adjoins the drain electrode.

19. The semiconductor device of claim 18, wherein a section of the semiconductor zone doped complementarily to the drain zone is arranged between the drain zone and the drift zone.

20. The semiconductor device of claim 19, further comprising:

a field stop zone of the same doping type as the drift zone and more highly doped than the drift zone and arranged between the drift zone and the semiconductor zone doped complementarily to the drain zone.

21. The semiconductor device of claim 18, wherein the drain zone and the semiconductor zone doped complementarily to the drain zone adjoin the drift zone.

22. The semiconductor device of claim 21, further comprising:

a field stop zone distant to the drain zone and the semiconductor zone doped complementarily to the drain zone, of the same doping type as the drift zone and more highly doped.

23. The semiconductor device of claim 18, further comprising:

a field stop zone of the same doping type as the drift zone and more highly doped than the drift zone and arranged between the drift zone on one side and the drain zone or the semiconductor zone doped complementarily to the drain zone on the other side.

24. The semiconductor device of claim 18, further comprising:

a capacitive component connected between the drift control zone and the body zone.

25. The semiconductor device of claim 24, wherein a contact zone doped complementarily to the drift control zone is arranged between the drift control zone and the contact electrode.

26. The semiconductor device of claim 24,

wherein the body zone and the source zone are connected with each other through a source electrode and a doped semiconductor zone of the same doping type as the body zone and more highly doped than the body zone;

and

wherein the capacitive component is connected to the source electrode.

27. The semiconductor device of claim 18, further comprising:

a contact electrode of the drift control zone configured to receive a drive potential.

28. The semiconductor device of claim 18, wherein the drift control zone is coupled to the body zone via a rectifier element.

29. The semiconductor device of claim 18, wherein the drift control zone and the drift zone have the same doping type.

30. The semiconductor device of claim 18, wherein the drift control zone and the drift zone have complementary doping types.

31. The semiconductor device of claim 18, wherein the drift control zone is coupled to the drain zone via a rectifier element.

32. The semiconductor device of claim 31, wherein the drift control zone is connected to the rectifier element through a doped semiconductor zone of the same doping type as the drift control zone and more highly doped than the drift control zone.

33. The semiconductor device of claim 18, wherein the drift control zone is coupled to the gate electrode through a rectifier element.

34. The semiconductor device of claim 18, wherein the source zone, the drift zone and the drain zone have the same doping type.