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Nonplanar device with thinned lower body portion and method of fabrication

  • US 9,190,518 B2
  • Filed: 05/08/2014
  • Issued: 11/17/2015
  • Est. Priority Date: 10/25/2004
  • Status: Active Grant
First Claim
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1. A nonplanar tri-gate transistor comprising:

  • a semiconductor body having;

    a top surface opposite a bottom surface; and

    a pair of laterally opposite sidewalls extending between the top surface and the bottom surface, wherein the laterally opposite sidewalls include a tapered portion that extends from the top surface to the bottom surface of the semiconductor body such that a distance between the laterally opposite sidewalls at the top surface is greater than a distance between the laterally opposite sidewalls at the bottom surface;

    a gate dielectric layer formed on and in direct contact with the top surface and the sidewalls of the semiconductor body from the top surface to the bottom surface;

    a gate electrode formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body; and

    a pair of source/drain region formed in the semiconductor body on opposite sides of the gate electrode.

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