Method of forming a light emitting diode structure and a light diode structure

• US 9,190,560 B2
• Filed: 05/18/2010
• Issued: 11/17/2015
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Agency For Science Technology and Research
• Original Assignee: Agency For Science Technology and Research
• Inventors: Sudhiranjan, Tripathy, Vivian Kaixin, Lin, Siew Lang, Teo, Surani Bin, Dolmanan
• Primary Examiner(s): Moore, Whitney T
• Assistant Examiner(s): Wilson, Scott R
• Application Number:
  US13/698,982
• Publication Number:
  US 20130193466A1
• Time in Patent Office: 2,009 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A method of forming a vertical III-nitride based light emitting diode structure and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure.

Claims

1. A method of forming a vertical III-nitride based light emitting diode structure, the method comprising,

forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate;

forming a metal-based electrode structure on the III-nitride based light emitting structure; and

removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure;

wherein the method further comprises creating an inhomogeneous Group III metal content in the III-nitride based light emitting structure for modulating emission spectra of the light emitting diode structure by patterning a buried oxide layer of the SOI substrate.

2. The method as claimed in claim 1, wherein the step of removing the SOI substrate comprises mechanically removing substrate material, etching substrate material or both.

3. The method as claimed in claim 2, wherein the mechanically removing substrate material step comprises one or more of a group consisting of lapping, grinding and etching, wherein the mechanically removing substrate material removes SOI and Si handle material.

4. The method as claimed in claim 1, wherein the step of forming the III-nitride based light emitting structure comprises growing nitride epilayers on the SOI substrate using metal organic chemical vapor deposition (MOCVD).

5. The method as claimed in claim 1, further comprising forming a seed layer on the III-nitride based light emitting structure for facilitating the layer transfer process.

6. The method as claimed in claim 5, wherein the seed layer comprises nickel.

7. The method as claimed in claim 5, further comprising bonding the seed layer to the metal-based substrate using electroplating, electroless deposition or both.

8. The method as claimed in claim 1, wherein the patterning step comprises using a SiO2 mask to form the patterns on (111)-oriented silicon.

9. The method as claimed in claim 1, wherein the step of forming the III-nitride based light emitting structure further comprises forming a nitride-based buffer layer directly on the SOI substrate.

10. The method as claimed in claim 1, further comprising forming a reflective mirror layer on top of the III-nitride based light emitting structure, the mirror layer being capable of functioning as a p-type contact electrode, prior to the layer transfer process.

11. The method as claimed in claim 10, wherein the reflective mirror layer comprises a plurality of layers selected from a group of material consisting of nickel, gold, platinum, silver, palladium and ruthenium and the method further comprises subjecting the reflective mirror layer to thermal annealing in which the temperature ranges from about 400°

C. to about 700°

C.

12. The method as claimed in claim 1, further comprising selectively forming photonic crystal (PhC) structures on the III-nitride based light emitting structure after the step of removing the SOI substrate.

13. The method as claimed in claim 12, further comprising forming an n-type contact electrode structure on an n-doped III-nitride layer of the III-nitride based light emitting diode structure after the step of selectively forming photonic crystal (PhC) structures.

14. The method as claimed in claim 13, wherein the n-type contact electrode structure comprises a plurality of layers selected from a group of material consisting of titanium, aluminium, gold, chromium and nickel.

15. The method as claimed in claim 1, wherein the SOI substrate is prepared using a separation by implantation of oxygen (SIMOX) process to create Si overlayers which vary from about 10 nm to about 300 nm thick with a buried oxide or silicon dioxide thickness ranging from about 60 to about 400 nm.

16. The method as claimed in claim 1, wherein the SOI substrate comprises a (111)-oriented Si overlayer and a (111)-oriented Si handle.

17. The method as claimed in claim 1, wherein the step of creating an inhomogeneous Group III metal content in the III-nitride based light emitting structure comprises creating an inhomogeneous indium content in the III-nitride based light emitting structure for modulating emission spectra of the light emitting diode structure.

18. A method of forming a vertical III-nitride based light emitting diode structure, the method comprising,

patterning a buried oxide layer of a silicon-on-insulator (SOI) substrate;

forming a III-nitride based light emitting structure on the patterned SOI substrate;

removing the patterned SOI substrate; and

creating an inhomogeneous Group III metal content in the III-nitride based light emitting structure for modulating the emission spectra from the light emitting diode structure using the buried oxide layer patterned in the patterning step.

19. The method as claimed in claim 18, wherein the patterning step comprises using a SiO₂ mask to form the patterns during a separation by implantation of oxygen (SIMOX) process.

20. The method as claimed in claim 18, wherein the step of forming the III-nitride based light emitting structure further comprises forming a buffer layer directly on the patterned SOI substrate.

21. The method as claimed in claim 18, wherein the patterned SOI substrate comprises a (111)-oriented Si overlayer and a (111)-oriented Si handle.

22. The method as claimed in claim 18, wherein the SOI substrate is patterned with micron scale circular or hexagonal concentric type shapes to induce modulated emission spectra from the vertical III-nitride based light emitting diode structure.

23. The method as claimed in claim 18, wherein the SOI substrate is patterned using a separation by implantation of oxygen (SIMOX) process to create periodic Si overlayers which vary from about 10 nm to about 300 nm thick with a patterned buried oxide or silicon dioxide thickness ranging from about 60 to about 400 nm.

24. The method as claimed in claim 18, wherein the step of creating an inhomogeneous Group III metal content in the III-nitride based light emitting structure comprises creating an inhomogeneous indium content in the III-nitride based light emitting structure for modulating emission spectra of the light emitting diode structure.