Laser annealing of GaN LEDs with reduced pattern effects
First Claim
1. A method of laser annealing a GaN light-emitting diode (LED) structure, comprisingforming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions;
- generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and
irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
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Abstract
The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
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Citations
15 Claims
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1. A method of laser annealing a GaN light-emitting diode (LED) structure, comprising
forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions; -
generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A GaN light-emitting diode (LED) apparatus suitable for laser annealing with a P-polarized anneal laser beam having an anneal wavelength, comprising:
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a GaN multilayer structure that includes p-GaN and n-GaN layers that sandwich an active layer; and a plurality of conductive structures formed atop either the p-GaN layer or the n-GaN layer, the conductive structures each being elongate with a long dimension and a short dimension and aligned generally in the same direction, with the short dimension being smaller than the anneal wavelength. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification