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Laser annealing of GaN LEDs with reduced pattern effects

  • US 9,190,570 B2
  • Filed: 11/16/2012
  • Issued: 11/17/2015
  • Est. Priority Date: 11/06/2009
  • Status: Expired due to Fees
First Claim
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1. A method of laser annealing a GaN light-emitting diode (LED) structure, comprisingforming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions;

  • generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and

    irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

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