Semiconductor arrangement, semiconductor module, and method for connecting a semiconductor chip to a ceramic substrate

• US 9,196,562 B2
• Filed: 09/07/2011
• Issued: 11/24/2015
• Est. Priority Date: 10/20/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Siepe, Dirk, Bayerer, Reinhold
• Primary Examiner(s): Weiss, Howard
• Assistant Examiner(s): SKYLES, TIFNEY L
• Application Number:
  US13/226,981
• Publication Number:
  US 20110316160A1
• Time in Patent Office: 1,539 Days
• Field of Search: 257/703, 257/700, 257/701
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05172 Vanadium [V] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48491 being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48766 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48866 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78313 : Wedge
• CPC Class Codes: H01L 2224/82105 : by using a preform
• CPC Class Codes: H01L 2224/82106 : by subtractive methods
• CPC Class Codes: H01L 2224/83205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8383 : Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/8384 : Sintering
• CPC Class Codes: H01L 2224/8501 : Cleaning, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 23/3735 : Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01002 : Helium [He]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.

Claims

1. A semiconductor arrangement comprising:

a silicon body having a top surface and a bottom surface;

a thin electrically conductive adhesion layer deposited on the top surface of said silicon body;

a thick metal layer arranged on the thin electrically conductive adhesion layer, said thick metal layer having a bonding surface facing away from the top surface of said silicon body;

a bonding wire having a diameter of at least 300 micrometers (μ

m) or a bonding ribbon having a thickness of at least 200 micrometers (μ

m) bonded to said thick metal layer at the bonding surface of said thick metal layer; and

wherein the thickness of said thick metal layer is at least 10 micrometers (μ

m), said thick metal layer comprises copper or a copper alloy, and said bonding wire or bonding ribbon comprises copper or a copper-based material.

2. The arrangement according to claim 1, further comprising a barrier-layer disposed between said thick metal-layer and said silicon body for inhibiting diffusion of metal from said thick metal layer into said silicon body.

3. The arrangement according to claim 2, wherein the total thickness of said thick metal-layer is 20 micrometers (μ

m).

4. The arrangement according to claim 2, wherein the total thickness of said adhesion-layer and said barrier-layer is equal or less than 1 micrometers (μ

m).

5. The arrangement according to claim 1, wherein the thick metal-layer has an electrical conductivity of at least 4.4·

10⁷ ohm meters (Ω

m).

6. The arrangement according to claim 1, wherein the thick metal-layer has a thermal conductivity of at least 300 watts per Kelvin per meter (W m⁻

1 K<sup>−

1</sup>).

7. The arrangement according to claim 1, wherein the thick-metal layer comprises a first thick-metal layer and the arrangement includes a second thick metal-layer arranged on the bottom surface of said silicon body, the ratio of the total thickness of said first and second thick metal-layers and the thickness of said silicon body is between 0.1 and 1.

8. A semiconductor arrangement comprising:

a silicon body having a top surface and a bottom surface;

a thick metal layer arranged on the top surface of said silicon body, said thick metal layer having a bonding surface facing away from the top surface of said silicon body;

a bonding wire or a ribbon bonded to said thick metal layer at the bonding surface of said thick metal layer, wherein the bonding wire has a thickness of at least 300 micrometers (μ

m) and the ribbon has a thickness of at least 200 micrometers (μ

m) and a width of at least 1 millimeter (mm); and

wherein the thickness of said thick metal layer is at least 10 micrometers (μ

m), said thick metal layer comprises copper or a copper alloy, and said bonding wire or ribbon comprises copper or a copper-based material.

9. The arrangement according to claim 8, further comprising a thin electrically conductive adhesion layer deposited on at least one of said surfaces of said silicon body.

10. The arrangement according to claim 9, further comprising a barrier-layer disposed between said thick metal-layer and said silicon body for inhibiting diffusion of metal from said thick metal layer into said silicon body.

11. The arrangement according to claim 10, wherein the total thickness of said thick metal-layer is 20 micrometers (μ

m).

12. The arrangement according to claim 10, wherein the total thickness of said adhesion-layer and said barrier-layer is equal or less than 1 micrometers (μ

m).

13. The arrangement according to claim 8, wherein the thick metal-layer has an electrical conductivity of at least 4.4·

10⁷ ohm meters (Ω

m).

14. The arrangement according to claim 8, wherein the thick metal-layer has a thermal conductivity of at least 300 watts per Kelvin per meter (W m⁻

1 K<sup>−

1</sup>).

15. The arrangement according to claim 8, wherein the thick-metal layer comprises a first thick-metal layer and the arrangement includes a second thick metal-layer arranged on the bottom surface of said silicon body, the ratio of the total thickness of said first and second thick metal-layers and the thickness of said silicon body is between 0.1 and 1.