Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
First Claim
1. A nanotube diode comprising:
- a cathode layer formed of a semiconductor material; and
an anode layer formed of a patterned nanotube fabric,wherein the patterned nanotube fabric comprises metallic nanotube elements,wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor material within the cathode layer,wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor material forms a Schottky barrier,wherein the cathode layer and the anode layer are in fixed and direct physical contact, andwherein the cathode layer and anode layer are constructed and arranged such that sufficient electrical stimulus applied to the cathode layer and the anode layer creates a conductive pathway between the cathode layer and the anode layer.
4 Assignments
0 Petitions
Accused Products
Abstract
Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.
-
Citations
19 Claims
-
1. A nanotube diode comprising:
-
a cathode layer formed of a semiconductor material; and an anode layer formed of a patterned nanotube fabric, wherein the patterned nanotube fabric comprises metallic nanotube elements, wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor material within the cathode layer, wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor material forms a Schottky barrier, wherein the cathode layer and the anode layer are in fixed and direct physical contact, and wherein the cathode layer and anode layer are constructed and arranged such that sufficient electrical stimulus applied to the cathode layer and the anode layer creates a conductive pathway between the cathode layer and the anode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A nanotube diode comprising:
-
a conductive terminal; a semiconductor element disposed over and in electrical communication with the conductive terminal, wherein the semiconductor element forms a cathode layer; and a nanotube switching element disposed over and in fixed electrical communication with the semiconductor element, wherein the nanotube switching element forms an anode layer, wherein the nanotube switching element comprises a conductive contact and a patterned nanotube fabric element capable of a plurality of resistance states, and wherein the patterned nanotube fabric element comprises metallic nanotube elements, wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor element of the cathode layer, wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor element forms a Schottky barrier, wherein the cathode layer and the anode layer are constructed and arranged such that in response to sufficient electrical stimuli applied to the conductive contact and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the conductive terminal and the conductive contact. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
Specification