Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

• US 9,196,615 B2
• Filed: 08/08/2007
• Issued: 11/24/2015
• Est. Priority Date: 05/09/2005
• Status: Active Grant

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: Bertin, Claude L., Rueckes, Thomas, Huang, X. M. Henry, Sivarajan, Ramesh, Ghenciu, Eliodor G., Konsek, Steven L., Meinhold, Mitchell
• Primary Examiner(s): TORNOW, MARK W
• Application Number:
  US11/835,865
• Publication Number:
  US 20080157257A1
• Time in Patent Office: 3,030 Days
• Field of Search: 977/932, 977/940, 977/943
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/19 Memory cell comprising at least a nanowire and only two terminals
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 63/20 comprising selection components having two electrodes, e.g. diodes

Abstract

Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.

Claims

1. A nanotube diode comprising:

a cathode layer formed of a semiconductor material; and

an anode layer formed of a patterned nanotube fabric,

wherein the patterned nanotube fabric comprises metallic nanotube elements,

wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor material within the cathode layer,

wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor material forms a Schottky barrier,

wherein the cathode layer and the anode layer are in fixed and direct physical contact, and

wherein the cathode layer and anode layer are constructed and arranged such that sufficient electrical stimulus applied to the cathode layer and the anode layer creates a conductive pathway between the cathode layer and the anode layer.

2. The nanotube diode of claim 1, wherein the patterned nanotube fabric is a non-woven nanotube fabric comprising a plurality of unaligned nanotubes.

3. The nanotube diode of claim 2, wherein the non-woven nanotube fabric comprises a layer of nanotubes having a thickness between approximately 0.5 and approximately 20 nanometers.

4. The nanotube diode of claim 2, wherein the non-woven nanotube fabric comprises a block of nanotubes.

5. The nanotube diode of claim 1, wherein the cathode comprises an n-type semiconductor material.

6. The nanotube diode of claim 1, further in electrical communication with a nonvolatile memory cell, the nanotube diode capable of controlling electrical stimulus to the nonvolatile memory cell.

7. The nanotube diode of claim 1, further in electrical communication with a nonvolatile nanotube switch, the nanotube diode capable of controlling electrical stimulus to the nonvolatile nanotube switch.

8. The nanotube diode of claim 1, further in electrical communication with an electrical network of switching elements, the nanotube diode capable of controlling electrical stimulus to the electrical network of switching elements.

9. The nanotube diode of claim 1, further in communication with a storage element, the nanotube diode capable of selecting the storage element in response to electrical stimulus.

10. The nanotube diode of claim 9, wherein the storage element is nonvolatile.

11. The nanotube diode of claim 1, further in communication with an integrated circuit,

the nanotube diode operable as a rectifier for the integrated circuit.

12. A nanotube diode comprising:

a conductive terminal;

a semiconductor element disposed over and in electrical communication with the conductive terminal, wherein the semiconductor element forms a cathode layer; and

a nanotube switching element disposed over and in fixed electrical communication with the semiconductor element, wherein the nanotube switching element forms an anode layer,

wherein the nanotube switching element comprises a conductive contact and a patterned nanotube fabric element capable of a plurality of resistance states, and

wherein the patterned nanotube fabric element comprises metallic nanotube elements,

wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor element of the cathode layer,

wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor element forms a Schottky barrier,

wherein the cathode layer and the anode layer are constructed and arranged such that in response to sufficient electrical stimuli applied to the conductive contact and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the conductive terminal and the conductive contact.

13. The nanotube diode of claim 12, wherein the semiconductor element comprises an n-type semiconductor material.

14. The nanotube diode of claim 12, further in electrical communication with a nonvolatile memory cell, the nanotube diode capable of controlling electrical stimulus to the nonvolatile memory cell.

15. The nanotube diode of claim 12, further in electrical communication with a nonvolatile nanotube switch, the nanotube diode capable of controlling electrical stimulus to the nonvolatile nanotube switch.

16. The nanotube diode of claim 12, further in electrical communication with an electrical network of switching elements, the nanotube diode capable of controlling electrical stimulus to the electrical network of switching elements.

17. The nanotube diode of claim 12, further in communication with a storage element, the nanotube diode capable of selecting the storage element in response to electrical stimulus.

18. The nanotube diode of claim 17, wherein the storage element is nonvolatile.

19. The nanotube diode of claim 12, further in communication with an integrated circuit, the nanotube diode operable as a rectifier for the integrated circuit.