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Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

  • US 9,196,615 B2
  • Filed: 08/08/2007
  • Issued: 11/24/2015
  • Est. Priority Date: 05/09/2005
  • Status: Active Grant
First Claim
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1. A nanotube diode comprising:

  • a cathode layer formed of a semiconductor material; and

    an anode layer formed of a patterned nanotube fabric,wherein the patterned nanotube fabric comprises metallic nanotube elements,wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor material within the cathode layer,wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor material forms a Schottky barrier,wherein the cathode layer and the anode layer are in fixed and direct physical contact, andwherein the cathode layer and anode layer are constructed and arranged such that sufficient electrical stimulus applied to the cathode layer and the anode layer creates a conductive pathway between the cathode layer and the anode layer.

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