3D stacked IC device with stepped substack interlayer connectors

• US 9,196,628 B1
• Filed: 05/08/2014
• Issued: 11/24/2015
• Est. Priority Date: 05/08/2014
• Status: Active Grant

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Chen, Shih-Hung
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US14/273,206
• Publication Number:
  US 20150325587A1
• Time in Patent Office: 565 Days
• Field of Search: 257/758, 257/324, 257/211
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 43/20 characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/50 characterised by the boundary region between the core and peripheral circuit regions

Abstract

A stepped substack interlayer connector structure on a multilayer integrated circuit includes N steps on the substrate from a surface of the substrate at a first level to a surface of the substrate at a second level. A stack of active layers alternating with insulating layers on the substrate, including a plurality of substacks disposed in relation to the N step(s) to form respective contact regions in which the substacks are disposed at a common level. Interlayer connectors are formed by conductors in the respective regions connected to landing areas on active layers in each of the plurality of substacks. The maximum depth of the interlayer connectors is equal to, or less than, the thickness of one of the substacks.

Claims

1. A structure on a multilayer device, comprising:

a substrate;

N step(s) on the substrate from a surface of the substrate at a first level to a surface of the substrate at a second level, where N is an integer one or greater;

a stack of active layers alternating with insulating layers on the substrate, including a plurality of substacks disposed in relation to the N step(s) to form respective contact regions in which the substacks are disposed at a common level, each substack having an upper layer;

a nonconductive, silicon nitride etch stop layer covering the upper layer of each of the plurality of substacks; and

conductors in the respective regions connected to landing areas on active layers in each of the plurality of substacks, the conductors passing through and physically contacting the nonconductive, silicon nitride etch stop layer.

2. The structure of claim 1, wherein N equals 1, the step having a rise and a run, wherein the run of the step is at the second level, the stack including first and second substacks having respective uppermost layers, the first substack overlying the rise and run of the step, and the second substack overlying the first substack and the surface at the first level to form a first region over the first substack and a second region over the second substack in which first and second substacks are disposed at a common level;

and

the conductors comprise interlayer connectors in the first and second regions extending to landing areas on active layers in each of the first and second substacks.

3. The structure of claim 2, wherein first and second substacks have respective thicknesses, and the combination of the rise of the step with the thickness of the first substack, matches the combination of the thicknesses of the first substack and second substack.

4. The structure of claim 2, wherein first and second substacks have matching thicknesses, and the rise of the step matches the thicknesses of the substacks.

5. The structure of claim 2, wherein the conductors to the lowermost active layers in the first and second substacks have matching lengths.

6. The structure of claim 2, wherein the conductors to the lowermost active layers in the first and second substance have a maximum length matching the thickness of the thickest one of the first and second substacks.

7. The structure of claim 1, wherein:

where N is greater than one, and the N steps include step (i), for i=0 to N−

1, each step having a rise and a run, wherein the run of a last step (i=N−

1) in the N steps is at the second level;

the stack of active layers including N+1 substacks, including substacks (j), for j equal to 0 to N, and having respective uppermost layers, a first substack (j), j equal to 0, overlying the rises and runs of the N steps including the last step (i), i equal to N−

1, intermediate substacks (j) for j equal to 1 to N−

1 overlying the preceding substacks and overlying the rises of the steps (i), for i equal to N−

1−

j, and a uppermost substack overlying the preceding substacks and no step in the N steps, whereby the respective contact regions over the substacks in which uppermost layers of the substacks are disposed at the common level.

8. The structure of claim 7, wherein substacks have respective thicknesses, and the combination of the rise of the step (N−

1−

i), for j equal to 0 to N−

1, with the thickness of substack (j), for j equal to i, matches the combination of the thicknesses of the substack (j) and substack (j+1).

9. The structure of claim 7, wherein the N+1 substacks have matching thicknesses, the rises of the steps match the thicknesses of the substacks.

10. The structure of claim 7, wherein the conductors to the lowermost active layers in the N+1 substacks have matching lengths from common level to the landing areas.

11. The structure of claim 7, wherein the conductors to the lowermost active layers in the N+1 substacks have a maximum length from the common level to the landing areas matching the thickness of the thickest one of the N+1 substacks.

12. The structure of claim 1, wherein the rise(s) of said N step(s) is/are on a side of a pit in the substrate.

22. The structure of claim 1, wherein the active layers are polysilicon active layers.

13. An integrated circuit, comprising:

a substrate having a memory area and a peripheral area, the memory area including a pit in the substrate having a stepped side;

a stack of active layers in the memory area alternating with insulating layers on the substrate, active layers in the stack including landing pad areas;

the stack including a plurality of substacks having respective uppermost layers, and with landing pad areas disposed in relation to the stepped side so that uppermost layers of the plurality of substacks are disposed at a common level in respective contact regions, each substack having an upper layer;

a nonconductive, silicon nitride etch stop layer covering the upper layer of each of the plurality of sub stacks; and

conductors in the respective contact regions extending to landing areas on the landing pads of the active layers in each of the plurality of substacks, the conductors passing through and physically contacting the nonconductive, silicon nitride etch stop layer.

14. The integrated circuit of claim 13, wherein the stack of active layers includes bit lines of a 3D NAND memory.

15. The integrated circuit of claim 13, wherein the stack of active layers includes word lines of a 3D NAND memory.

23. The integrated circuit of claim 13, wherein the active layers are polysilicon active layers.

16. A method for manufacturing a structure for a multilayer device, comprising:

forming N step(s), where N is an integer equal to one or greater, including step (i), for i=0 to N−

1, from a surface of a substrate at a first level to a surface of the substrate at a second level, each step having a rise and a run, wherein the run of a last step (i=N−

1) in the N steps is at the second level;

forming a stack of active layers alternating with insulating layers on the substrate, the stack including N+1 substacks, including substacks (j), for j equal to 0 to N, and having respective uppermost layers, a first substack (j), j equal to 0, overlying the rises and runs of the N steps including the last step (i), i equal to N−

1, intermediate substacks (j) for j equal to 1 to N−

1 overlying the preceding substacks and overlying the rises of the steps (i), for i equal to N−

1−

j, and a uppermost substack overlying the preceding substacks and no step in the N steps;

to form respective regions over the substacks in which uppermost layers of the substacks are disposed at a common level, each substack having an upper layer;

forming a nonconductive, silicon nitride etch stop layer covering the upper layer of each sub stack; and

forming vias in the respective regions passing through the etch stop layer and to landing areas on active layers in each of the plurality of substacks; and

forming conductors in the vias, the conductors passing through and physically contacting the nonconductive, silicon nitride etch stop layer.

17. The method of claim 16, wherein substacks have respective thicknesses, and the combination of the rise of the step (N−

1−

i), for j equal to 0 to N−

1, with the thickness of substack (j), for j equal to i, matches the combination of the thicknesses of the substack (j) and substack (j+1).

18. The method of claim 16, wherein the N+1 substacks have matching thicknesses, the rises of the steps match the thicknesses of the substacks.

19. The method of claim 16, wherein each substack has M layers, where M is between (1+2^K−

1) and 2^K, and the stack forming step includes at most K etching steps, whereby vias to landing areas on N+1 times M active layers are formed in the at most K etch steps.

20. The method of claim 16, wherein at least one substack has M layers, and M is between (1+2^K−

1) and 2^K, the other substacks have M layers or fewer, and the stack forming step includes at most K etching steps.

21. The method of claim 16, wherein said forming a step includes forming a pit in a substrate, a side of the pit including the rises of the N steps.

24. The method of claim 16, wherein the active layers forming step is carried out by forming a stack of polysilicon active layers.