Method of fabricating a vertical MOS transistor
First Claim
1. A transistor, comprising:
- a substrate;
a first dielectric on the substrate;
a conductive layer in the first dielectric;
a hole through the conductive layer, the hole exposing an inner lateral edge of the conductive layer and a portion of a surface of the substrate;
a gate dielectric on the inner lateral edge of the conductive layer;
a bottom dielectric having an outer region on the surface of the substrate;
a first semiconductor material in the hole;
an etch-protection semiconductor sidewall on a lateral edge of the hole, the etch-protection semiconductor sidewall covering the gate dielectric and the outer region of the bottom dielectric; and
a bottom dielectric having an outer region between a bottom of the etch-protection sidewall and the surface.
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Accused Products
Abstract
The disclosure relates to a method of fabricating a vertical MOS transistor, comprising the steps of: forming, above a semiconductor surface, a conductive layer in at least one dielectric layer; etching a hole through at least the conductive layer, the hole exposing an inner lateral edge of the conductive layer and a portion of the semiconductor surface; forming a gate oxide on the inner lateral edge of the conductive layer and a bottom oxide on the portion of the semiconductor surface; forming an etch-protection sidewall on the lateral edge of the hole, the sidewall covering the gate oxide and an outer region of the bottom oxide, leaving an inner region of the bottom oxide exposed; etching the exposed inner region of the bottom oxide until the semiconductor surface is reached; and depositing a semiconductor material in the hole.
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Citations
12 Claims
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1. A transistor, comprising:
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a substrate; a first dielectric on the substrate; a conductive layer in the first dielectric; a hole through the conductive layer, the hole exposing an inner lateral edge of the conductive layer and a portion of a surface of the substrate; a gate dielectric on the inner lateral edge of the conductive layer; a bottom dielectric having an outer region on the surface of the substrate; a first semiconductor material in the hole; an etch-protection semiconductor sidewall on a lateral edge of the hole, the etch-protection semiconductor sidewall covering the gate dielectric and the outer region of the bottom dielectric; and a bottom dielectric having an outer region between a bottom of the etch-protection sidewall and the surface. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A device, comprising:
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a substrate; a first doped layer in the substrate; a first dielectric layer on the first doped layer; a second dielectric layer on the first dielectric layer; a conductive layer in the second dielectric layer; a third dielectric layer on the second dielectric layer and on the conductive layer; an opening through the third dielectric layer, the conductive layer, and the first dielectric layer, the opening exposing a surface of the first doped layer, sidewalls of the opening including portions of the first and third dielectric layer and the conductive layer; a first dielectric region at an intersection of the surface of the first doped layer and a first sidewall of the opening; a second dielectric region at the intersection of the surface of the first doped layer and a second sidewall of the opening; a third dielectric region on the portion of the sidewall that is the conductive layer; a protective semiconductor sidewall in the opening and on the first, second, and third dielectric regions; a semiconductor material in the opening in contact with the surface of the first doped layer, the semiconductor material having a first dopant concentration adjacent to the first doped layer and a second dopant concentration spaced from the first dopant concentration by the third dielectric region. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification