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Method for manufacturing P-type MOSFET

  • US 9,196,706 B2
  • Filed: 12/07/2012
  • Issued: 11/24/2015
  • Est. Priority Date: 11/30/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a P-type MOSFET, the method comprising:

  • forming a part of the MOSFET on a semiconductor substrate, the part of the MOSFET comprising source/drain regions in the semiconductor substrate, a replacement gate stack between the source/drain regions above the semiconductor substrate, and a gate spacer surrounding the replacement gate stack;

    removing the replacement gate stack of the MOSFET to form a gate opening exposing a surface of the semiconductor substrate;

    forming an interface oxide layer on the exposed surface of the semiconductor substrate;

    forming a high-K gate dielectric layer on the interface oxide layer in the gate opening;

    forming a first metal gate layer on the high-K gate dielectric layer;

    implanting dopant ions into the first metal gate layer;

    forming a second metal gate layer on the first metal gate layer to fill the gate opening; and

    performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high-K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.

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