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Semiconductor device and manufacturing method thereof

  • US 9,196,745 B2
  • Filed: 01/06/2015
  • Issued: 11/24/2015
  • Est. Priority Date: 07/08/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor stacked layer comprising a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer;

    a gate electrode layer and the oxide semiconductor stacked layer overlap each other; and

    a gate insulating film between the gate electrode layer and the oxide semiconductor stacked layer,wherein energy at a bottom of a conduction band of the second oxide semiconductor layer is lower than energy at a bottom of a conduction band of the first oxide semiconductor layer and energy at a bottom of a conduction band of the third oxide semiconductor layer, andwherein the second oxide semiconductor layer comprises a crystal including a c-axis alignment.

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