Semiconductor device and manufacturing method thereof

• US 9,196,745 B2
• Filed: 01/06/2015
• Issued: 11/24/2015
• Est. Priority Date: 07/08/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Shinohara, Satoshi
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US14/590,133
• Publication Number:
  US 20150115263A1
• Time in Patent Office: 322 Days
• Field of Search: 257/43, 257/59, 257/72
• US Class Current: 1/1
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Claims

1. A semiconductor device comprising:

an oxide semiconductor stacked layer comprising a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer;

a gate electrode layer and the oxide semiconductor stacked layer overlap each other; and

a gate insulating film between the gate electrode layer and the oxide semiconductor stacked layer,

wherein energy at a bottom of a conduction band of the second oxide semiconductor layer is lower than energy at a bottom of a conduction band of the first oxide semiconductor layer and energy at a bottom of a conduction band of the third oxide semiconductor layer, and

wherein the second oxide semiconductor layer comprises a crystal including a c-axis alignment.

2. The semiconductor device according to claim 1, wherein the third oxide semiconductor layer covers a side surface of the first oxide semiconductor layer and a top and side surfaces of the second oxide semiconductor layer.

3. The semiconductor device according to claim 1, further comprising a source electrode and a drain electrode electrically connected to the oxide semiconductor stacked layer.

4. The semiconductor device according to claim 1, wherein the second oxide semiconductor layer has greater electron affinity than the first oxide semiconductor layer and the third oxide semiconductor layer.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor stacked layer has a hydrogen concentration lower than or equal to 5×

10¹⁹ /cm³.

6. The semiconductor device according to claim 1, wherein the second oxide semiconductor layer comprises In, Sn, and Zn.

7. The semiconductor device according to claim 1, wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises In, Ga, and Zn.

8. The semiconductor device according to claim 1,

wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises In, Ga, and Zn, and

wherein the second oxide semiconductor layer comprises In, Sn, and Zn.

9. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer is located over the gate electrode layer.

10. A semiconductor device comprising:

an oxide semiconductor stacked layer comprising a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer;

a gate electrode layer and the oxide semiconductor stacked layer overlap each other; and

a gate insulating film between the gate electrode layer and the oxide semiconductor stacked layer,

wherein energy at a bottom of a conduction band of the second oxide semiconductor layer is lower than energy at a bottom of a conduction band of the first oxide semiconductor layer and energy at a bottom of a conduction band of the third oxide semiconductor layer,

wherein the oxide semiconductor stacked layer comprises a channel formation region, and

wherein the channel formation region comprises a crystal including a c-axis alignment.

11. The semiconductor device according to claim 10, wherein the second oxide semiconductor layer comprises the channel formation region.

12. The semiconductor device according to claim 10, wherein the third oxide semiconductor layer covers a side surface of the first oxide semiconductor layer and a top and side surfaces of the second oxide semiconductor layer.

13. The semiconductor device according to claim 10, further comprising a source electrode and a drain electrode electrically connected to the oxide semiconductor stacked layer.

14. The semiconductor device according to claim 10, wherein the second oxide semiconductor layer has greater electron affinity than the first oxide semiconductor layer and the third oxide semiconductor layer.

15. The semiconductor device according to claim 10, wherein the oxide semiconductor stacked layer has a hydrogen concentration lower than or equal to 5×

10¹⁹ /cm³.

16. The semiconductor device according to claim 10, wherein the second oxide semiconductor layer comprises In, Sn, and Zn.

17. The semiconductor device according to claim 10, wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises In, Ga, and Zn.

18. The semiconductor device according to claim 10,

wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises In, Ga, and Zn, and

wherein the second oxide semiconductor layer comprises In, Sn, and Zn.

19. The semiconductor device according to claim 10, wherein the first oxide semiconductor layer is located over the gate electrode layer.

20. A semiconductor device comprising:

a first oxide semiconductor layer;

a second oxide semiconductor layer on the first oxide semiconductor layer;

a third oxide semiconductor layer on the second oxide semiconductor layer, wherein the third oxide semiconductor layer covers side surfaces of the second oxide semiconductor layer;

a source electrode on and in contact with the third oxide semiconductor layer;

a drain electrode on and in contact with the third oxide semiconductor layer;

a gate electrode layer comprising a region overlapping with the first oxide semiconductor layer, the second oxide semiconductor layer and the third oxide semiconductor layer;

wherein energy at a bottom of a conduction band of the second oxide semiconductor layer is lower than energy at a bottom of a conduction band of the first oxide semiconductor layer and energy at a bottom of a conduction band of the third oxide semiconductor layer, and

wherein the second oxide semiconductor layer comprises a crystal including a c-axis alignment.

21. The semiconductor device according to claim 20, wherein the third oxide semiconductor layer covers side surfaces of the first oxide semiconductor layer.

22. The semiconductor device according to claim 20, wherein the second oxide semiconductor layer has greater electron affinity than the first oxide semiconductor layer and the third oxide semiconductor layer.

23. The semiconductor device according to claim 20, wherein an oxide semiconductor stacked layer comprising the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer has a hydrogen concentration lower than or equal to 5×

10¹⁹ /cm³.

24. The semiconductor device according to claim 20, wherein the first oxide semiconductor layer is located over the gate electrode layer.