Semiconductor device and method for manufacturing semiconductor device
First Claim
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1. A semiconductor device, comprising:
- an n-type semiconductor layer including a nitride semiconductor, the n-type semiconductor layer including a boron-containing region including boron bonded to oxygen; and
a first metal layer contacting the boron-containing region.
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Abstract
According to one embodiment, a semiconductor device includes an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer includes a nitride semiconductor. The n-type semiconductor layer includes a boron-containing region including boron bonded to oxygen. The first metal layer contacts the boron-containing region.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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an n-type semiconductor layer including a nitride semiconductor, the n-type semiconductor layer including a boron-containing region including boron bonded to oxygen; and a first metal layer contacting the boron-containing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising:
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forming a boron-containing region in an n-type semiconductor layer including a nitride semiconductor by performing plasma processing of the n-type semiconductor layer in an atmosphere including BCl3 gas, the boron-containing region including boron bonded to oxygen; and forming a first metal layer on the boron-containing region to contact the boron-containing region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification