Light emitting diode device and flip-chip packaged light emitting diode device

• US 9,196,797 B2
• Filed: 10/26/2012
• Issued: 11/24/2015
• Est. Priority Date: 11/29/2011
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Genesis Photonics Inc.
• Inventors: Lo, Yu-Yun, Huang, Yi-Ru, Wu, Chih-Ling, Li, Yun-Li, Lin, Tzu-Yang
• Primary Examiner(s): JUNGE, BRYAN R.
• Application Number:
  US13/661,272
• Publication Number:
  US 20130134464A1
• Time in Patent Office: 1,124 Days
• Field of Search: 257/98, 438/29
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Claims

1. A light emitting diode device, comprising:

a device substrate;

a first-type doping layer, disposed on said device substrate;

a light emitting layer, disposed on said first-type doping layer;

a second-type doping layer, disposed on said light emitting layer;

a plurality of Ohmic-contact layers and a plurality of planarized buffer layers, disposed on said second-type doping layer, said Ohmic-contact layers and said planarized buffer layers being stacked together, said planarized buffer layers being configured for mending said Ohmic-contact layers;

a reflection layer, disposed on said stacked layers of Ohmic-contact layers and said planarized buffer layers; and

two electrodes, disposed on said reflection layer and said first-type doping layer, respectively.

2. The light emitting diode device of claim 1, wherein said reflection layer has the effect of mirror reflection by means of said planarized buffer layer.

3. The light emitting diode device of claim 1, wherein said first-type doping layer is an n-type semiconductor layer, and said second-type doping layer is a p-type semiconductor layer.

4. The light emitting diode device of claim 1, wherein said Ohmic-contact layers are metal thin films or metal-oxide layers.

5. The light emitting diode device of claim 1, wherein the light transmittance of said Ohmic-contact layers are greater than 90%.

6. The light emitting diode device of claim 1, wherein the thickness of said Ohmic-contact layers are smaller than 5000 angstroms.

7. The light emitting diode device of claim 1, wherein said planarized buffer layers are metal-oxide layers with light transmittance greater than 95%.

8. The light emitting diode device of claim 7, wherein the metal oxide is chosen from one of the group consisting of indium-tin oxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zinc oxide.

9. The light emitting diode device of claim 1, wherein the root-mean-square roughness of the surface between said planarized buffer layers and reflection layer is less than 20 angstroms.

10. The light emitting diode device of claim 1, wherein the thickness of the planarized buffer layers are between 500 and 5000 angstroms.

11. The light emitting diode device of claim 1, wherein said reflection layer is chosen from the group consisting of silver, gold, aluminum, and copper.

12. The light emitting diode device of claim 1 further comprising a cover layer disposed on said reflection layer and extending to the sidewall of said reflection layer.

13. A flip-chip packaged light emitting diode device, comprising:

a packaging substrate;

a light emitting diode device, flipped on and connected electrically with said packaging substrate, and said light emitting diode device comprising;

a device substrate;

a first-type doping layer, disposed on said device substrate;

a light emitting layer, disposed on said first-type doping layer;

a second-type doping layer, disposed on said light emitting layer;

a plurality of Ohmic-contact layers and a plurality of planarized buffer layers, disposed on said second-type doping layer, said Ohmic-contact layers and said planarized buffer layers being stacked together, said planarized buffer layers being configured for mending said Ohmic-contact layers;

a reflection layer, disposed on said stacked layers of said Ohmic-contact layers and said planarized buffer layers; and

two electrodes, disposed on said reflection layer and said first-type doping layer, respectively.

14. The flip-chip packaged light emitting diode device of claim 13, wherein said light emitting diode device is connected electrically with said packaging substrate by means of a eutectic structure.

15. A light emitting diode device, comprising:

a device substrate;

a first-type doping layer, disposed on said device substrate;

a light emitting layer, disposed on said first-type doping layer;

a second-type doping layer, disposed on said light emitting layer;

a plurality of Ohmic-contact layers and a plurality of planarized buffer layers, disposed on said second-type doping layer, said Ohmic-contact layers and said planarized buffer layers being stacked together, said planarized buffer layers being configured for mending said Ohmic-contact layers;

a reflection layer, disposed on said stacked layers of Ohmic-contact layers and said planarized buffer layers, wherein a root-mean-square roughness of a surface between said planarized buffer layers and the reflection layer is less than a surface roughness of the ohmic-contact layers; and

two electrodes, disposed on said reflection layer and said first-type doping layer, respectively.

16. The light emitting diode device of claim 15, wherein said reflection layer has the effect of mirror reflection by means of said planarized buffer layer.

17. The light emitting diode device of claim 15, wherein said Ohmic-contact layers are metal thin films or metal-oxide layers.

18. The light emitting diode device of claim 15, wherein the light transmittance of said Ohmic-contact layers is greater than 90%.

19. The light emitting diode device of claim 15, wherein the thicknesses of said Ohmic-contact layers are smaller than 5000 angstroms.

20. The light emitting diode device of claim 15, wherein said planarized buffer layers are metal-oxide layers with light transmittance greater than 95%.

21. The light emitting diode device of claim 15, wherein the root-mean-square roughness of the surface between a planarized buffer layer and reflection layer is less than 20 angstroms.

22. The light emitting diode device of claim 15, wherein the thicknesses of the planarized buffer layers are between 500 and 5000 angstroms.

23. The light emitting diode device of claim 15, wherein said reflection layer is chosen from the group consisting of silver, gold, aluminum, and copper.

24. The light emitting diode device of claim 15 further comprising a cover layer disposed on said reflection layer and extending to the sidewall of said reflection layer.

25. A light emitting diode device, comprising:

a device substrate;

a first-type doping layer, disposed on said device substrate;

a light emitting layer, disposed on said first-type doping layer;

a second-type doping layer, disposed on said light emitting layer;

a plurality of Ohmic-contact layers and a plurality of planarized buffer layers disposed on said second-type doping layer, said Ohmic-contact layers and said planarized buffer layers being stacked together, said planarized buffer layers being configured for mending said Ohmic-contact layers;

a reflection layer, disposed on said stacked layers of Ohmic-contact layers and said planarized buffer layers, wherein a root-mean-square roughness of a surface between a planarized buffer layer and the reflection layer is less than a surface roughness of an Ohmic-contact layer; and

two electrodes, disposed on said reflection layer and said first-type doping layer, respectively.

26. The light emitting diode device of claim 25, wherein said reflection layer has the effect of mirror reflection by means of said planarized buffer layer.

27. The light emitting diode device of claim 25, wherein said Ohmic-contact a layers are metal thin films or metal oxide layers.

28. The light emitting diode device of claim 25, wherein the light transmittance of said Ohmic-contact layers is greater than 90%.

29. The light emitting diode device of claim 25, wherein the thicknesses of said Ohmic-contact layers are smaller than 5000 angstroms.

30. The light emitting diode device of claim 25, wherein said planarized buffer layer is a layers are metal-oxide layers with light transmittance greater than 95%.

31. The light emitting diode device of claim 25, wherein the root-mean-square roughness of the surface between a planarized buffer layer and reflection layer is less than 20 angstroms.

32. The light emitting diode device of claim 25, wherein the thicknesses of the planarized buffer layers are between 500 and 5000angstroms.

33. The light emitting diode device of claim 25, wherein said reflection layer is chosen from the group consisting of silver, gold, aluminum, and copper.

34. The light emitting diode device of claim 25 further comprising a cover layer disposed on said reflection layer and extending to the sidewall of said reflection layer.