Light-radiating semiconductor component with a luminescence conversion element

• US 9,196,800 B2
• Filed: 11/02/2009
• Issued: 11/24/2015
• Est. Priority Date: 06/26/1996
• Status: Expired due to Fees

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Reeh, Ulrike, Stath, Norbert, Waitl, Gnter, Schlotter, Peter, Schmidt, Ralf, Hhn, Klaus, Schneider, Jrgen
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US12/610,560
• Publication Number:
  US 20100044739A1
• Time in Patent Office: 2,213 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: C09K 11/7718 with alkaline earth metals
• CPC Class Codes: C09K 11/7746 with alkaline earth metals
• CPC Class Codes: C09K 11/7767 Chalcogenides
• CPC Class Codes: C09K 11/7769 Oxides C09K11/7768 takes precedence
• CPC Class Codes: C09K 11/7774 Aluminates
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2933/0091 : Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/501 : characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: Y02B 20/00 : Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Claims

1. A light-radiating semiconductor component comprising

a semiconductor body having a semiconductor layer sequence comprising layers based on GaN and configured to emit electromagnetic radiation of a first wavelength range during operation of the semiconductor component;

and

a luminescence conversion element comprising at least one luminescent material,

wherein the first wavelength range comprises at least light from the blue spectral range and the luminescence conversion element is operable to convert some electromagnetic radiation from the first wavelength range into light of at least one second wavelength range, different from the first wavelength range, in such a way that the semiconductor component emits white light, the white light being composed of visible light of the first wavelength range and of visible light of the at least one second wavelength range and having a spectrum, which spectrum has a first relative intensity peak in the blue spectral range, has a second relative intensity peak at a wavelength between 500 nm and 600 nm, and extends at least to a wavelength of 700 nm with a full-width half-maximum (FWHM) for the second relative intensity peak of at least about 80 nm,

the light-radiating semiconductor component further comprising;

a first transparent encapsulation directly covering the semiconductor layer sequence, wherein the luminescence conversion element is a luminescence conversion layer applied directly on the first transparent encapsulation; and

a second transparent encapsulation directly covering the luminescence conversion layer.

2. The semiconductor component of claim 1, wherein the luminescence conversion element is arranged downstream in a main radiation direction of the semiconductor component as seen from the semiconductor body.

3. The semiconductor component of claim 1, wherein the luminescence conversion element is a luminescence conversion encapsulation which encloses at least a part of the semiconductor body.

4. The semiconductor component of claim 1, wherein the colors of the first wavelength range and the second wavelength range lie at least partially in mutually complementary-color spectral regions.

5. The semiconductor component of claim 1 further comprising a housing, wherein the housing has a recess, the semiconductor body is disposed in the recess, and the recess is at least partially filled with the luminescence conversion element.

6. The semiconductor component of claim 1, further comprising a housing, the housing having a recess in which the semiconductor body is disposed, wherein the luminescence conversion layer is arranged over the recess.

7. The semiconductor component of claim 1, wherein the luminescence conversion element comprises a plurality of layers having mutually different wavelength conversion properties.

8. The semiconductor component of claim 1, wherein the luminescence conversion element comprises particles of at least one inorganic luminescent material.

9. The semiconductor component of claim 8, wherein the inorganic luminescent material is selected from the group consisting of garnets doped with rare earth, alkaline earth metal sulfides doped with rare earth, thiogallates doped with rare earth, aluminates doped with rare earth and orthosilicates doped with rare earth.

10. The semiconductor component of claim 9, wherein the luminescent material is a Ce-doped garnet.

11. The semiconductor component of claim 8, wherein the luminescent material is YAG:

Ce.

12. The semiconductor component of claim 8, wherein the particles are embedded in a matrix material, the matrix material comprising a thermoplastic resin or a thermosetting material.

13. The semiconductor component of claim 12, wherein the matrix material comprises epoxy resin or acrylate resin.

14. The semiconductor component of claim 8, wherein the particles are embedded in a matrix material, the matrix material comprising low-melting inorganic glass.

15. The semiconductor component of claim 8, wherein the particles are embedded in a matrix material, the matrix material comprising a silicone material.

16. The semiconductor component of claim 8, wherein the particles of the inorganic luminescence material are embedded in a matrix material, the particles are undissolved in the matrix material, and the inorganic luminescence material and the matrix material have mutually different refractive indices, such that the luminescence conversion element is operable to absorb a first portion of the light emitted from the semiconductor body for converting the first portion to a different color and to scatter a second portion of the light emitted from the semiconductor body without absorbing the second portion.

17. The semiconductor component of claim 8, wherein the particles have a median particle size of approximately 10 gm.

18. The semiconductor component of claim 15, wherein the particles have a median particle size of approximately 10 gm.

19. The semiconductor component of claim 1, wherein the luminescence conversion element comprises a plurality of different luminescent materials selected from the group consisting of organic luminescent materials and inorganic luminescent materials.

20. The semiconductor component of claim 1, wherein the luminescence conversion element includes dye molecules selected from the group consisting of organic dye molecules with wavelength conversion effect, organic dye molecules without wavelength conversion effect, inorganic dye molecules with wavelength conversion effect, inorganic dye molecules without wavelength conversion effect.

21. The semiconductor component of claim 1, wherein the luminescence conversion element comprises light scattering particles.

22. The semiconductor component of claim 1, wherein the luminescence conversion element includes a luminescent material that is luminescent in a blue spectral region.

23. The semiconductor component of claim 1, wherein the luminescence conversion element comprises at least one luminescent 4f-organometallic compound.

24. The semiconductor component of claim 1, wherein the electromagnetic radiation emitted by the semiconductor body has a luminescence intensity maximum at a wavelength λ

<

520 nm.

25. The semiconductor component of claim 24, wherein the light emitted by the semiconductor body has a luminescence intensity maximum at a wavelength of between 420 nm and 460 nm.

26. The semiconductor component of claim 24, wherein a wavelength range which is spectrally selectively absorbed by the luminescence conversion element lies outside the luminescence intensity maximum.

27. The semiconductor component of claim 1, wherein the first relative intensity peak is at a wavelength of approximately 470 nm.

28. The semiconductor component of claim 1, wherein a part of the light from the blue spectral range emitted by the semiconductor body is converted into the yellow spectral region by the luminescence conversion element.

29. The semiconductor component of claim 1, wherein the semiconductor body is operable to emit ultraviolet light and the luminescence conversion element is configured for converting at least a portion of the ultraviolet light into visible light.

30. The semiconductor component of claim 1, wherein the luminescence conversion element contains particles of a luminescent material in a matrix, thereby contributing to an attenuation of the directional characteristic of electromagnetic radiation of the first wavelength range in such way that the electromagnetic radiation of the first wavelength range originating from the semiconductor body and passing through the luminescence conversion element and the light from the second wavelength range originating from the luminescent material are mixed in such a manner that a spatially homogenous color perception is effected.

31. An interior lighting of an aircraft cabin comprising a plurality of the light-radiating semiconductor components of claim 1.

32. A display device, comprising a display and a plurality of the semiconductor components of claim 1, wherein the semiconductor components are disposed to illuminate the display.

33. The display device of claim 32, wherein the display is a liquid crystal display.

34. A full-color LED display device comprising a plurality of the light-radiating semiconductor components of claim 1.

35. The semiconductor component of claim 1, wherein the full-width half-maximum (FWHM) for the second relative intensity peak is at least about 100 nm.

36. The semiconductor component of claim 1, wherein the spectrum extends at least to a wavelength of 700 nm with an intensity of at least about 5% of the intensity of the second relative intensity peak.

37. The semiconductor component of claim 35, wherein the spectrum extends at least to a wavelength of 700 nm with an intensity of at least about 5% of the intensity of the second relative intensity peak.

38. The light radiating semiconductor component of claim 1, wherein the luminescence conversion element comprises particles of orthosilicates doped with rare earth.

39. A light-radiating semiconductor component comprising

a semiconductor body having a semiconductor layer sequence comprising layers based on GaN and configured to emit electromagnetic radiation of a first wavelength range during operation of the semiconductor component;

and

a luminescence conversion element comprising at least one luminescent material,

wherein the first wavelength range comprises at least light from the blue spectral range and the luminescence conversion element is operable to convert some electromagnetic radiation from the first wavelength range into light of at least one second wavelength range, different from the first wavelength range, in such a way that the semiconductor component emits white light, the white light being composed of visible light of the first wavelength range and of visible light of the at least one second wavelength range and having a spectrum, which spectrum has a first relative intensity peak in the blue spectral range, has a second relative intensity peak at a wavelength between 500 nm and 600 nm, and extends at least to a wavelength of 700 nm with a full-width half-maximum (FWHM) for the second relative intensity peak of at least about 80 nm,

the light radiating semiconductor component further comprising;

a reflective part to which the semiconductor layer sequence is fixed and defining a first electrical terminal for the light radiating semiconductor component;

a first transparent encapsulation covering the semiconductor layer sequence, wherein the first transparent encapsulation comprises an inorganic glass and wherein the luminescence conversion element is a luminescence conversion layer applied on the first transparent encapsulation;

a second transparent encapsulation covering the luminescence conversion layer, wherein the second transparent encapsulation comprises an epoxy resin or an inorganic glass, and

a bonding wire connecting the semiconductor layer sequence to a second electrical terminal for light radiating semiconductor component, wherein the bonding wire passes through the first encapsulation, the luminescence conversion layer, and the second encapsulation.

40. A light-radiating semiconductor component comprising

a semiconductor body having a semiconductor layer sequence comprising layers based on GaN and configured to emit electromagnetic radiation of a first wavelength range during operation of the semiconductor component;

and

a luminescence conversion element comprising at least one luminescent material,

wherein the first wavelength range comprises at least light from the blue spectral range and the luminescence conversion element is operable to convert some electromagnetic radiation from the first wavelength range into light of at least one second wavelength range, different from the first wavelength range, in such a way that the semiconductor component emits white light, the white light being composed of visible light of the first wavelength range and of visible light of the at least one second wavelength range and having a spectrum, which spectrum has a first relative intensity peak in the blue spectral range, has a second relative intensity peak at a wavelength between 500 nm and 600 nm with a full-width half-maximum (FWHM) for the second relative intensity peak of at least about 80 nm, and wherein the spectrum extends at least to a wavelength of 700 nm with an intensity of at least about 5% of the intensity of the second relative intensity peak,

the light-radiating semiconductor component further comprising;

a reflective part to which the semiconductor layer sequence is fixed and defining a first electrical terminal for the light radiating semiconductor component;

a first transparent encapsulation covering the semiconductor layer sequence, wherein the first transparent encapsulation comprises an inorganic glass and wherein the luminescence conversion element is a luminescence conversion layer applied on the first transparent encapsulation;

a second transparent encapsulation covering the luminescence conversion layer, wherein the second transparent encapsulation comprises an epoxy resin or an inorganic glass, and

a bonding wire connecting the semiconductor layer sequence to a second electrical terminal for light radiating semiconductor component, wherein the bonding wire passes through the first encapsulation, the luminescence conversion layer, and the second encapsulation.