Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
First Claim
1. A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure, the method comprising:
- measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device;
identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device;
detaching the identified Fin structure from the 3D field effect transistor device using a nanomanipulator probe tip;
welding the detached Fin to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV; and
applying the incident focused ion beam having a voltage of less than about 1000 eV to a tip of the Fin that is welded to the nanomanipulator probe tip, wherein the tip of the Fin is sharpened by the focused ion beam.
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Accused Products
Abstract
A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip. The tip of the Fin may then be sharpened by the focused ion beam.
16 Citations
20 Claims
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1. A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure, the method comprising:
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measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device; identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device; detaching the identified Fin structure from the 3D field effect transistor device using a nanomanipulator probe tip; welding the detached Fin to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV; and applying the incident focused ion beam having a voltage of less than about 1000 eV to a tip of the Fin that is welded to the nanomanipulator probe tip, wherein the tip of the Fin is sharpened by the focused ion beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure, the method comprising:
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applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency; generating, from the Argon ion source, a collimated ion beam incident on a crystalline surface of the semiconductor structure for planar removal of layers of the crystalline surface, wherein the collimated ion beam minimizes surface amorphization of the crystalline surface of the semiconductor structure; exposing first and second contact regions underlying the crystalline surface associated with the 3D field effect transistor device using an end-point detector based on the planar removal of the layers; coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer; coupling the high-frequency impedance probe to a first and a second atomic force probe tip; coupling, using an atomic force microscope, the first atomic force probe tip to the exposed first contact region; coupling, using the atomic force microscope, the second atomic force probe tip to the exposed second contact region; measuring the C-V characteristic for the 3D field effect transistor device on the impedance analyzer, the impedance analyzer applying an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions associated with the 3D field effect transistor device using the high-frequency impedance probe; and detaching, based on the measured C-V characteristic, a Fin structure from the 3D field effect transistor device using a nanomanipulator probe tip, the detached Fin being both welded to the nanomanipulator probe tip and shaped using an incident focused ion beam having a voltage of less than about 1000 eV. - View Dependent Claims (18)
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19. A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure, the method comprising:
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identifying, based on a capacitance-voltage (C-V) characteristic measurement, a Fin structure corresponding to the 3D field effect transistor device; removing a hardmask layer from a top surface of the Fin structure using a collimated ion beam generated by applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency; applying a metallic coating to the Fin structure; detaching the coated Fin structure from the 3D field effect transistor device using a nanomanipulator probe tip; welding the detached coated Fin to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV; and applying the incident focused ion beam having a voltage of less than about 1000 eV to a tip of the Fin that is welded to nanomanipulator probe tip, wherein the tip of the Fin is sharpened by the incident focused ion beam. - View Dependent Claims (20)
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Specification