Semiconductor device

• US 9,201,280 B2
• Filed: 02/24/2015
• Issued: 12/01/2015
• Est. Priority Date: 12/05/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Tran, Thanh Y
• Application Number:
  US14/629,772
• Publication Number:
  US 20150177543A1
• Time in Patent Office: 280 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133528 Polarisers
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.

Claims

1. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second insulating film over the first conductive film;

a second conductive film having a light-transmitting property and a third conductive film over the second insulating film;

a fourth conductive film having a light-blocking property over the second conductive film;

a third insulating film over the third conductive film and the fourth conductive film; and

a fifth conductive film over the third insulating film,

wherein the fourth conductive film includes a first layer including molybdenum in contact with the second conductive film at least partly and a second layer including aluminum in contact with the first layer at least partly,

wherein the first layer includes a region in contact with the second conductive film,

wherein the second layer includes a region in contact with the first layer,

wherein each of the second conductive film, the third conductive film, and the fifth conductive film includes indium tin oxide, and

wherein the fifth conductive film is in contact with the third conductive film at least partly.

2. The semiconductor device according to claim 1,

wherein both of the second conductive film and the third conductive film are in contact with the second insulating film and include same material.

3. A liquid crystal display module comprising:

the semiconductor device according to claim 1;

a polarizing plate; and

a light source.

4. An electronic appliance comprising:

the liquid crystal display module according to claim 3; and

an operation key.

5. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second insulating film over the first conductive film;

a second conductive film having a light-transmitting property and a third conductive film over the second insulating film;

a fourth conductive film having a light-blocking property over the second conductive film;

a third insulating film over the third conductive film and the fourth conductive film; and

a fifth conductive film over the third insulating film;

wherein the fourth conductive film includes a first layer including titanium in contact with the second conductive film at least partly and a second layer including aluminum in contact with the first layer at least partly,

wherein the first layer includes a region in contact with the second conductive film,

wherein the second layer includes a region in contact with the first layer,

wherein each of the second conductive film, the third conductive film, and the fifth conductive film includes indium tin oxide, and

wherein the fifth conductive film is in contact with the third conductive film at least partly.

6. The semiconductor device according to claim 5,

wherein both of the second conductive film and the third conductive film are in contact with the second insulating film and include same material.

7. A liquid crystal display module comprising:

the semiconductor device according to claim 5;

a polarizing plate; and

a light source.

8. An electronic appliance comprising:

the liquid crystal display module according to claim 7; and

an operation key.

9. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second insulating film over the first conductive film;

a second conductive film having a light-transmitting property and a third conductive film over the second insulating film;

a fourth conductive film having a light-blocking property over the second conductive film;

a third insulating film over the third conductive film and the fourth conductive film; and

a fifth conductive film over the third insulating film;

wherein the fourth conductive film includes a first layer including tungsten in contact with the second conductive film at least partly and a second layer including aluminum in contact with the first layer at least partly,

wherein the first layer includes a region in contact with the second conductive film,

wherein the second layer includes a region in contact with the first layer,

wherein each of the second conductive film, the third conductive film, and the fifth conductive film includes indium tin oxide, and

wherein the fifth conductive film is in contact with the third conductive film at least partly.

10. The semiconductor device according to claim 9,

wherein both of the second conductive film and the third conductive film are in contact with the second insulating film and include same material.

11. A liquid crystal display module comprising:

the semiconductor device according to claim 9;

a polarizing plate; and

a light source.

12. An electronic appliance comprising:

the liquid crystal display module according to claim 11; and

an operation key.

13. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second insulating film over the first conductive film;

a second conductive film having a light-transmitting property and a third conductive film over the second insulating film;

a fourth conductive film having a light-blocking property over the second conductive film;

a third insulating film over the third conductive film and the fourth conductive film; and

a fifth conductive film over the third insulating film;

wherein the fourth conductive film includes a first layer including tantalum in contact with the second conductive film at least partly and a second layer including aluminum in contact with the first layer at least partly,

wherein the first layer includes a region in contact with the second conductive film,

wherein the second layer includes a region in contact with the first layer,

wherein each of the second conductive film, the third conductive film, and the fifth conductive film includes indium tin oxide, and

wherein the fifth conductive film is in contact with the third conductive film at least partly.

14. The semiconductor device according to claim 13,

wherein both of the second conductive film and the third conductive film are in contact with the second insulating film and include same material.

15. A liquid crystal display module comprising:

the semiconductor device according to claim 13;

a polarizing plate; and

a light source.

16. An electronic appliance comprising:

the liquid crystal display module according to claim 15; and

an operation key.

17. A semiconductor device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second insulating film over the first conductive film;

a second conductive film having a light-transmitting property and a third conductive film over the second insulating film;

a fourth conductive film having a light-blocking property over the second conductive film;

a third insulating film over the third conductive film and the fourth conductive film; and

a fifth conductive film over the third insulating film;

wherein the fourth conductive film includes a first layer including chromium in contact with the second conductive film at least partly and a second layer including aluminum in contact with the first layer at least partly,

wherein the first layer includes a region in contact with the second conductive film,

wherein the second layer includes a region in contact with the first layer,

wherein each of the second conductive film, the third conductive film, and the fifth conductive film includes indium tin oxide, and

wherein the fifth conductive film is in contact with the third conductive film at least partly.

18. The semiconductor device according to claim 17,

wherein both of the second conductive film and the third conductive film are in contact with the second insulating film and include same material.

19. A liquid crystal display module comprising:

the semiconductor device according to claim 17;

a polarizing plate; and

a light source.

20. An electronic appliance comprising:

the liquid crystal display module according to claim 19; and

an operation key.