Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first transistor including a channel formation region in an oxide semiconductor layer; and
a logic circuit comprising a second transistor including a channel formation region comprising a semiconductor material other than an oxide semiconductor,wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to at least one input of the logic circuit,wherein the semiconductor device is designed so that an input signal is applied to the logic circuit through the first transistor when the first transistor is in an on state, and the input signal is stored at a gate electrode of the second transistor when the first transistor is in an off state, andwherein the first transistor is provided above the logic circuit.
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Abstract
The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
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Citations
31 Claims
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1. A semiconductor device comprising:
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a first transistor including a channel formation region in an oxide semiconductor layer; and a logic circuit comprising a second transistor including a channel formation region comprising a semiconductor material other than an oxide semiconductor, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to at least one input of the logic circuit, wherein the semiconductor device is designed so that an input signal is applied to the logic circuit through the first transistor when the first transistor is in an on state, and the input signal is stored at a gate electrode of the second transistor when the first transistor is in an off state, and wherein the first transistor is provided above the logic circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first transistor including a first gate electrode, a first source electrode, and a first drain electrode over a substrate; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode over the substrate; and a third transistor including a third gate electrode, a third source electrode, and a third drain electrode over the first transistor and the second transistor, wherein channel formation regions of the first transistor and the second transistor are formed using a semiconductor material other than an oxide semiconductor; wherein the third transistor includes a channel formation region in an oxide semiconductor layer; wherein one of the first source electrode and the first drain electrode and one of the second source electrode and the second drain electrode are electrically connected to each other; wherein the first gate electrode, the second gate electrode, and one of the third source electrode and the third drain electrode are directly connected to each other; and wherein the semiconductor device is designed so that an input signal is applied to the first gate electrode and the second gate electrode through the third transistor when the third transistor is in an on state, and the input signal is stored at the first gate electrode and the second gate electrode when the third transistor is in an off state. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a first transistor including a first gate electrode, a first source electrode, and a first drain electrode over a substrate; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode over the substrate; and a third transistor including a third gate electrode, a third source electrode, and a third drain electrode over the first transistor and the second transistor, wherein channel formation regions of the first transistor and the second transistor are formed using a semiconductor material other than an oxide semiconductor; wherein the third transistor includes a channel formation region in an oxide semiconductor layer; wherein one of the first source electrode and the first drain electrode and one of the second source electrode and the second drain electrode are electrically connected to each other; wherein the first transistor is a diode-connected transistor; wherein the second gate electrode and one of the third source electrode and the third drain electrode are directly connected to each other; and wherein the semiconductor device is designed so that an input signal is applied to the second gate electrode through the third transistor when the third transistor is in an on state, and the input signal is stored at the second gate electrode when the third transistor is in an off state. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification