Method of manufacturing a compound semiconductor substrate in a flattened growth substrate
First Claim
1. A method of fabricating a semiconductor substrate, the method comprising:
- growing a first compound semiconductor layer on a first surface of a substrate;
etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor layer irregular;
forming cavities in the first compound semiconductor layer;
separating the first compound semiconductor layer from the first surface of the substrate;
flattening the first surface of the substrate after separating the first compound semiconductor layer; and
growing a second compound semiconductor layer on the flattened first surface of the substrate,wherein;
forming the cavities comprises removing a patterned layer disposed on the first compound semiconductor layer; and
the patterned layer comprises an oxide region.
1 Assignment
0 Petitions
Accused Products
Abstract
Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including growing a first compound semiconductor layer on a first surface of a substrate, etching the first compound semiconductor layer using HF, KOH, or NaOH to roughen a first surface of the first compound semiconductor layer, forming cavities in the first compound semiconductor layer, separating the first compound semiconductor layer from the first surface of the substrate, flattening the first surface of the substrate after separating the first compound semiconductor layer, and growing a second compound semiconductor layer on the flattened first surface of the substrate.
50 Citations
20 Claims
-
1. A method of fabricating a semiconductor substrate, the method comprising:
-
growing a first compound semiconductor layer on a first surface of a substrate; etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor layer irregular; forming cavities in the first compound semiconductor layer; separating the first compound semiconductor layer from the first surface of the substrate; flattening the first surface of the substrate after separating the first compound semiconductor layer; and growing a second compound semiconductor layer on the flattened first surface of the substrate, wherein; forming the cavities comprises removing a patterned layer disposed on the first compound semiconductor layer; and the patterned layer comprises an oxide region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of fabricating a semiconductor substrate, the method comprising:
-
growing a first compound semiconductor layer on a first surface of a substrate; etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor layer irregular; forming cavities in the first compound semiconductor layer; separating the first compound semiconductor layer from the first surface of the substrate; flattening the first surface of the substrate after separating the first compound semiconductor layer; and growing a second compound semiconductor layer on the flattened first surface of the substrate, wherein; forming the cavities comprises removing a patterned layer disposed on the first compound semiconductor layer; and the patterned layer comprises an oxide region and a metallic material. - View Dependent Claims (10)
-
-
11. A method of fabricating a semiconductor substrate, the method comprising:
-
growing a first compound semiconductor layer on a first surface of a substrate; etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor layer irregular; forming cavities in the first compound semiconductor layer; separating the first compound semiconductor layer from the first surface of the substrate; flattening the first surface of the substrate after separating the first compound semiconductor layer; growing a second compound semiconductor layer on the flattened first surface of the substrate; forming a third compound semiconductor layer on the first surface of the first compound semiconductor layer; and disposing a second substrate on the first compound semiconductor layer after the first compound semiconductor layer is separated from the substrate, wherein the substrate comprises GaN and sapphire. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A method of fabricating a semiconductor substrate, the method comprising:
-
growing a first compound semiconductor layer on a first surface of a substrate; etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor layer irregular; forming cavities in the first compound semiconductor layer; separating the first compound semiconductor layer from the first surface of the substrate; flattening the first surface of the substrate after separating the first compound semiconductor layer; growing a second compound semiconductor layer on the flattened first surface of the substrate; forming a third compound semiconductor layer on the first surface of the first compound semiconductor layer; and disposing a second substrate on the first compound semiconductor layer after the first compound semiconductor layer is separated from the substrate, wherein; the substrate comprises GaN and sapphire; and the second substrate is disposed on the third compound semiconductor layer. - View Dependent Claims (17, 18, 19, 20)
-
Specification