Method for manufacturing a contact for a semiconductor component and related structure

• US 9,202,758 B1
• Filed: 04/19/2005
• Issued: 12/01/2015
• Est. Priority Date: 04/19/2005
• Status: Active Grant

• Current Assignee: Spansion LLC (Infineon Technologies AG)
• Original Assignee: GlobalFoundries, Inc., Cypress Semiconductor Corporation (Infineon Technologies AG)
• Inventors: Besser, Paul R., Ngo, Minh Van, Wang, Connie Pin-Chin, Yin, Jinsong, Pham, Hieu T.
• Primary Examiner(s): Nicely, Joseph C
• Application Number:
  US11/109,965
• Time in Patent Office: 3,878 Days
• Field of Search: 438/424, 438/270, 438/622, 438/633, 438/637
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/53266 Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 29/4975 being a silicide layer, e.g. TiSi2
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component and a method for manufacturing the semiconductor component that are suitable for use with low temperature processing. A semiconductor substrate is provided and an optional layer of silicon nitride is formed on the semiconductor substrate using Atomic Layer Deposition (ALD). A layer of dielectric material is formed on the silicon nitride layer using Sub-Atmospheric Chemical Vapor Deposition (SACVD) at a temperature below about 450° C. When the optional layer of silicon nitride is not present, the SACVD dielectric material is formed on the semiconductor substrate. A contact hole having sidewalls is formed through the SACVD dielectric layer, through the silicon nitride layer, and exposes a portion of the semiconductor substrate. A layer of tungsten nitride is formed on the exposed portion of the semiconductor substrate and along the sidewalls of the contact hole. Tungsten is formed on the layer of tungsten nitride.

Claims

1. A method for manufacturing a semiconductor component, comprising:

providing a semiconductor material;

forming a layer of silicon nitride directly on the semiconductor material;

forming a layer of dielectric material directly on the layer of silicon nitride using Sub-Atmospheric Chemical Vapor Deposition (SACVD), the layer of dielectric material comprising doped silicate glass;

forming a contact hole in the layer of dielectric material, the contact hole having sidewalls and exposing a portion of the semiconductor material; and

forming a layer of tungsten nitride in the contact hole and on the exposed portion;

wherein all processing temperatures for manufacturing the semiconductor component are less than about 450 degrees Celsius;

wherein forming the layer of dielectric material includes using ozone as a carrier gas.

2. The method of claim 1, wherein the layer of silicon nitride is formed using atomic layer deposition (ALD).

3. The method of claim 2, further including forming the contact hole through the layer of silicon nitride.

4. The method of claim 3, further including forming a layer of tungsten on the layer of tungsten nitride.

5. The method of claim 4, further including cleaning the contact hole before forming the layer of tungsten nitride.

6. The method of claim 1, further including forming a layer of tungsten on the layer of tungsten nitride.

7. The method of claim 1, further including cleaning the contact hole before forming the layer of tungsten nitride.

8. The method of claim 1, further including forming a layer of silicide from a portion of the semiconductor material and wherein forming the contact hole exposes the layer of silicide.

9. The method of claim 8, wherein forming the layer of silicide includes using a silicide selected from the group of silicides consisting of nickel silicide, tungsten silicide, titanium silicide, cobalt silicide, and tantalum silicide.