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Semiconductor device and method for manufacturing semiconductor device

  • US 9,202,851 B2
  • Filed: 12/05/2013
  • Issued: 12/01/2015
  • Est. Priority Date: 08/07/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor electrically connected to a pixel electrode layer; and

    a second transistor comprising;

    a first gate electrode layer;

    a first insulating layer over the first gate electrode layer;

    a first oxide semiconductor layer over the first insulating layer;

    a second oxide semiconductor layer over the first oxide semiconductor layer;

    a second insulating layer over and in contact with the second oxide semiconductor layer, the second insulating layer covering a side surface of the first oxide semiconductor layer;

    a source electrode layer and a drain electrode layer over the second insulating layer, the source electrode layer and the drain electrode layer being electrically connected to the second oxide semiconductor layer;

    a second gate electrode layer over the second insulating layer; and

    a third insulating layer over the second gate electrode layer,wherein the pixel electrode layer is over the third insulating layer.

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