Semiconductor device and method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- a first transistor electrically connected to a pixel electrode layer; and
a second transistor comprising;
a first gate electrode layer;
a first insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a second insulating layer over and in contact with the second oxide semiconductor layer, the second insulating layer covering a side surface of the first oxide semiconductor layer;
a source electrode layer and a drain electrode layer over the second insulating layer, the source electrode layer and the drain electrode layer being electrically connected to the second oxide semiconductor layer;
a second gate electrode layer over the second insulating layer; and
a third insulating layer over the second gate electrode layer,wherein the pixel electrode layer is over the third insulating layer.
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Abstract
The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a first transistor electrically connected to a pixel electrode layer; and a second transistor comprising; a first gate electrode layer; a first insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a second insulating layer over and in contact with the second oxide semiconductor layer, the second insulating layer covering a side surface of the first oxide semiconductor layer; a source electrode layer and a drain electrode layer over the second insulating layer, the source electrode layer and the drain electrode layer being electrically connected to the second oxide semiconductor layer; a second gate electrode layer over the second insulating layer; and a third insulating layer over the second gate electrode layer, wherein the pixel electrode layer is over the third insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising a pixel and a driver circuit, the pixel comprising a first transistor electrically connected to a pixel electrode layer, the driver circuit comprising a second transistor, the second transistor comprising:
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a first gate electrode layer; a first insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a second insulating layer over and in contact with the second oxide semiconductor layer, the second insulating layer covering a side surface of the first oxide semiconductor layer; a source electrode layer and a drain electrode layer over the second insulating layer, the source electrode layer and the drain electrode layer being electrically connected to the second oxide semiconductor layer; a second gate electrode layer over the second insulating layer; and a third insulating layer over the second gate electrode layer, wherein the pixel electrode layer is over the third insulating layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification