Method of growing group III nitride crystals
First Claim
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1. A method of growing an ingot of group III nitride composed of GaxAlyIn1-x-yN (0≦
- x≦
1, 0≦
x+y≦
1) comprising;
(a) growing a first group III nitride crystal on a first face of a seed; and
(b) growing a second group III nitride crystal on a second face of the seed;
wherein the seed comprises;
(1) a first layer comprised of a plurality of wafers, said plurality being comprised of at least a first group III nitride wafer and a second group III nitride wafer;
a) wherein the first group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the first group III nitride wafer in the seed;
b) wherein the second group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the second group III nitride wafer in the seed;
c) wherein the first group III nitride wafer'"'"'s edge faces the second group III nitride wafer'"'"'s edge; and
d) wherein said plurality of wafers in the first layer all have the same crystal lattice orientation, thereby establishing a crystal lattice orientation for the first face of the seed;
(2) a second layer comprised of a plurality of wafers, said plurality being comprised of at least a third group III nitride wafer and a fourth group III nitride wafer;
a) wherein the third group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the third group III nitride wafer in the seed;
b) wherein the fourth group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the fourth group III nitride wafer in the seed;
c) wherein the third group III nitride wafer'"'"'s edge faces the fourth group III nitride wafer'"'"'s edge; and
d) wherein the plurality of wafers in the second layer all have the same crystal lattice orientation, thereby establishing a crystal lattice orientation for the second face of the seed;
(3) wherein the first group III nitride wafer'"'"'s edge and the second group III nitride wafer'"'"'s edge are each positioned upon the hidden face of the third group III nitride wafer of the second layer;
(4) wherein the third group III nitride wafer'"'"'s edge and the fourth group III nitride wafer'"'"'s edge are each positioned upon the hidden face of the second group III nitride wafer of the first layer; and
(5) wherein the crystal lattice orientation at the first face of the seed is identical to the crystal lattice orientation at the second face of the seed.
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Abstract
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
32 Citations
10 Claims
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1. A method of growing an ingot of group III nitride composed of GaxAlyIn1-x-yN (0≦
- x≦
1, 0≦
x+y≦
1) comprising;(a) growing a first group III nitride crystal on a first face of a seed; and (b) growing a second group III nitride crystal on a second face of the seed; wherein the seed comprises; (1) a first layer comprised of a plurality of wafers, said plurality being comprised of at least a first group III nitride wafer and a second group III nitride wafer; a) wherein the first group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the first group III nitride wafer in the seed; b) wherein the second group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the second group III nitride wafer in the seed; c) wherein the first group III nitride wafer'"'"'s edge faces the second group III nitride wafer'"'"'s edge; and d) wherein said plurality of wafers in the first layer all have the same crystal lattice orientation, thereby establishing a crystal lattice orientation for the first face of the seed; (2) a second layer comprised of a plurality of wafers, said plurality being comprised of at least a third group III nitride wafer and a fourth group III nitride wafer; a) wherein the third group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the third group III nitride wafer in the seed; b) wherein the fourth group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the fourth group III nitride wafer in the seed; c) wherein the third group III nitride wafer'"'"'s edge faces the fourth group III nitride wafer'"'"'s edge; and d) wherein the plurality of wafers in the second layer all have the same crystal lattice orientation, thereby establishing a crystal lattice orientation for the second face of the seed; (3) wherein the first group III nitride wafer'"'"'s edge and the second group III nitride wafer'"'"'s edge are each positioned upon the hidden face of the third group III nitride wafer of the second layer; (4) wherein the third group III nitride wafer'"'"'s edge and the fourth group III nitride wafer'"'"'s edge are each positioned upon the hidden face of the second group III nitride wafer of the first layer; and (5) wherein the crystal lattice orientation at the first face of the seed is identical to the crystal lattice orientation at the second face of the seed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- x≦
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