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Semiconductor device and manufacturing method thereof

  • US 9,202,927 B2
  • Filed: 08/11/2014
  • Issued: 12/01/2015
  • Est. Priority Date: 11/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a gate electrode layer over the substrate;

    a gate insulating layer in contact with the gate electrode layer;

    an oxide semiconductor layer in contact with the gate insulating layer; and

    an insulating layer in contact with the oxide semiconductor layer,wherein the oxide semiconductor layer has a stepwise concentration gradient of oxygen, which becomes higher at a closer region to the insulating layer.

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