Semiconductor device
First Claim
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1. A semiconductor device comprising:
- an N-type drift layer;
a P-type anode layer on the N-type drift layer;
a trench penetrating the P-type anode layer;
a plurality of P+-type contact layers on the P-type anode layer and having impurity concentration which is higher than that of the P-type anode layer;
a conductive substance embedded in the trench via an insulating film; and
an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer,wherein the plurality of P+-type contact layers are spaced apart from each other and arranged in a longitudinal direction of the trench as viewed in plan.
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Abstract
A semiconductor device includes: an N-type drift layer; a P-type anode layer on the N-type drift layer; a trench penetrating the P-type anode layer; a conductive substance embedded in the trench via an insulating film; and an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer.
8 Citations
3 Claims
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1. A semiconductor device comprising:
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an N-type drift layer; a P-type anode layer on the N-type drift layer; a trench penetrating the P-type anode layer; a plurality of P+-type contact layers on the P-type anode layer and having impurity concentration which is higher than that of the P-type anode layer; a conductive substance embedded in the trench via an insulating film; and an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer, wherein the plurality of P+-type contact layers are spaced apart from each other and arranged in a longitudinal direction of the trench as viewed in plan. - View Dependent Claims (2, 3)
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Specification