Film bulk acoustic resonator comprising a bridge
First Claim
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1. A thin film bulk acoustic resonator (FBAR) structure, comprising:
- a substrate;
a cavity disposed in the substrate;
a first electrode disposed over the substrate and the cavity, wherein the first electrode substantially covers the cavity;
a planarization layer abutting an edge of the first electrode;
a piezoelectric layer disposed over the first electrode and the planarization layer;
a second electrode disposed over the piezoelectric layer; and
a bridge disposed in the piezoelectric layer and along a perimeter of an active region of the FBAR, the bridge being disposed partially over the substrate and extending past an edge of the cavity.
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Abstract
A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
535 Citations
20 Claims
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1. A thin film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate; a cavity disposed in the substrate; a first electrode disposed over the substrate and the cavity, wherein the first electrode substantially covers the cavity; a planarization layer abutting an edge of the first electrode; a piezoelectric layer disposed over the first electrode and the planarization layer; a second electrode disposed over the piezoelectric layer; and a bridge disposed in the piezoelectric layer and along a perimeter of an active region of the FBAR, the bridge being disposed partially over the substrate and extending past an edge of the cavity. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A thin film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate; a cavity disposed in the substrate; a first electrode disposed over a substrate, wherein the first electrode substantially covers the cavity; a planarization layer abutting an edge of the first electrode; a piezoelectric layer disposed over the first electrode and the planarization layer; a second electrode disposed over the piezoelectric layer; a first bridge disposed in the piezoelectric layer and along a perimeter of an active region of the FBAR, the bridge being disposed partially over the substrate and extending past an edge of the cavity; and a second bridge disposed between the piezoelectric layer and the second electrode. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A thin film bulk acoustic resonator (FBAR) structure, comprising:
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a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; a first bridge disposed between the first electrode and the piezoelectric layer, the first bridge being an unfilled bridge containing air; and a second bridge disposed between the piezoelectric layer and the second electrode, the second bridge being a filled bridge, containing a fill material having an acoustic impedance. - View Dependent Claims (14, 15, 16)
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17. A thin film bulk acoustic resonator (FBAR) structure, comprising:
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a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; a first bridge disposed between the first electrode and the piezoelectric layer, the first bridge being a filled bridge containing a fill material having an acoustic impedance; and a second bridge disposed between the piezoelectric layer and the second electrode, the second bridge being a unfilled bridge containing air. - View Dependent Claims (18, 19, 20)
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Specification