Power supply device and driving method thereof
First Claim
1. A power supply device comprising:
- an antenna sheet with a plurality of cells arranged in a matrix, each of the cells comprises one terminal of an antenna connected to one terminal of a transistor;
a high-frequency wave supply circuit connected to the other terminal of the transistor;
a potential detecting circuit connected to the other terminal of the antenna; and
a switch control circuit transmitting a first signal for a position detection operation and a second signal for a power feeding operation to a control terminal of the transistor,wherein a channel formation region of the transistor comprises an oxide semiconductor, andwherein the transistor is configured to feed power and detect a position.
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Accused Products
Abstract
An object of the present invention is to provide a highly reliable power supply device which can withstand long-term use. Another object of the present invention is to provide a power supply device with reduced power consumption. The power supply device includes a cell including an antenna and a switch and performing position detection operation and power feeding operation; a high-frequency wave supply circuit; a switch control circuit; and a potential detecting circuit. One electrode of the antenna is connected to the high-frequency wave supply circuit through the switch, and the other thereof is connected to the potential detecting circuit. By the position detection operation, whether there is a power receiving device which gets close to a cell or not is detected. Only when the power receiving device is detected, power is supplied by the power feeding operation.
127 Citations
20 Claims
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1. A power supply device comprising:
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an antenna sheet with a plurality of cells arranged in a matrix, each of the cells comprises one terminal of an antenna connected to one terminal of a transistor; a high-frequency wave supply circuit connected to the other terminal of the transistor; a potential detecting circuit connected to the other terminal of the antenna; and a switch control circuit transmitting a first signal for a position detection operation and a second signal for a power feeding operation to a control terminal of the transistor, wherein a channel formation region of the transistor comprises an oxide semiconductor, and wherein the transistor is configured to feed power and detect a position. - View Dependent Claims (2, 3, 11, 15, 16, 17, 19, 20)
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4. A method for driving a power supply device comprising a plurality of cells arranged in a matrix, a high-frequency wave supply circuit, a switch control circuit, and a potential detecting circuit and supplying power to a power receiving device which gets close to a cell of the cells, comprising the steps of:
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detecting the cell to which the power receiving device gets close with a high-frequency position detection wave by a position detection operation; and supplying power with a high-frequency power feeding wave from the detected cell by a power feeding operation, wherein a channel formation region of a thin film transistor of the power supply device comprises an oxide semiconductor, wherein the thin film transistor is configured to feed power and detect a position alternately, and wherein a switch control circuit transmits a first signal for the position detection operation and a second signal for the power feeding operation to a control terminal of the transistor. - View Dependent Claims (5, 6, 7)
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8. A power supply device comprising:
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an antenna sheet with a plurality of cells arranged in a matrix, each of the cells comprises one terminal of an antenna that is connected to one terminal of a transistor; a high-frequency wave supply circuit connected to the other terminal of the transistor; a potential detecting circuit connected to the other terminal of the antenna; and a switch control circuit transmitting a first signal for a position detection operation and a second signal for a power feeding operation to a control terminal of the transistor, wherein the transistor is configured to feed power and detect a position, and wherein a channel formation region of the transistor comprises an oxide semiconductor containing In and Zn. - View Dependent Claims (9, 10, 12, 13, 14, 18)
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Specification