Content addressable memory device having electrically floating body transistor

• US 9,208,880 B2
• Filed: 01/13/2014
• Issued: 12/08/2015
• Est. Priority Date: 01/14/2013
• Status: Active Grant

• Current Assignee: Law Office of Alan W. Cannon, Zeno Semiconductor, Inc.
• Original Assignee: Zeno Semiconductor, Inc.
• Inventors: Louie, Benjamin S., Han, Jin-Woo, Widjaja, Yuniarto
• Primary Examiner(s): LE, THONG QUOC
• Application Number:
  US14/154,138
• Publication Number:
  US 20140198551A1
• Time in Patent Office: 694 Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
• CPC Class Codes: G11C 15/04 using semiconductor elements
• CPC Class Codes: G11C 15/046 using non-volatile storage elements
• CPC Class Codes: G11C 16/0458 comprising two or more independent floating gates which store independent data
• CPC Class Codes: G11C 16/0475 comprising two or more independent storage sites which store independent data
• CPC Class Codes: G11C 2211/4013 Memory devices with multiple cells per bit, e.g. twin-cells
• CPC Class Codes: G11C 2211/4016 Memory devices with silicon-on-insulator cells
• CPC Class Codes: H10B 12/20 DRAM devices comprising floating-body transistors, e.g. floating-body cells

Abstract

A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data.

Claims

1. A content addressable memory cell comprising:

a first floating body transistor;

a second floating body transistor; and

a third transistor;

wherein said first floating body transistor and said second floating body transistor are electrically connected in series through a common node;

wherein said third transistor is electrically connected to said common node; and

wherein said first floating body transistor and said second floating body transistor store complementary data.

2. The content addressable memory of claim 1, wherein said first floating body transistor and said second floating body transistor comprise a buried well region.

3. The content addressable memory of claim 1, wherein said first floating body transistor and said second floating body transistor comprise a buried insulator region.

4. The content addressable memory of claim 1, wherein said first floating body transistor comprises a first gate region and said second floating body transistor comprises a second gate region.

5. The content addressable memory of claim 1, wherein said first floating body transistor comprises a first conductivity type and said third transistor comprises said first conductivity type.

6. The content addressable memory of claim 1, wherein said first floating body transistor comprises a first conductivity type and said third transistor comprises a second conductivity type different from said first conductivity type.

7. The content addressable memory of claim 1, wherein said third transistor comprises a third floating body transistor.

8. A content addressable memory comprising:

a first bi-stable floating body transistor; and

a second bi-stable floating body transistor;

wherein said first bi-stable floating body transistor and said second bi-stable floating body transistor are electrically connected in series through a common node; and

wherein said first floating body transistor and said second floating body transistor store complementary data.

9. The content addressable memory of claim 8, wherein said first bi-stable floating body transistor and said second bi-stable floating body transistor comprise a buried well region.

10. The content addressable memory of claim 8, wherein said first bi-stable floating body transistor and said second bi-stable floating body transistor comprise a buried insulator region.

11. The content addressable memory of claim 8, wherein said first bi-stable floating body transistor comprises a first gate region and said second bi-stable floating body transistor comprises a second gate region.

12. The content addressable memory of claim 8, further comprising an additional transistor.

13. The content addressable memory of claim 12, wherein said first floating body comprises a first conductivity type and said additional transistor comprises said first conductivity type.

14. The content addressable memory of claim 12, wherein said first floating body transistor comprises a first conductivity type and said additional transistor comprises a second conductivity type different from said first conductivity type.

15. The content addressable memory of claim 8, further comprising a third bi-stable floating body transistor.

16. A content addressable memory cell comprising:

a first transistor having a first floating body;

a second transistor having a second floating body;

a third transistor;

a first drain region contacting said first floating body;

a second drain region contacting said second floating body;

a first source region contacting said first floating body, spaced apart from said first drain region; and

a second source region contacting said second floating body, spaced apart from said second drain region;

wherein said first and second drain regions are electrically connected to each other;

wherein said third transistor is electrically connected to said first and second drain regions; and

wherein said first floating body and said second floating body store complementary charge states.

17. The content addressable memory of claim 16, wherein said first transistor and said second transistor comprise a buried well region.

18. The content addressable memory of claim 16, wherein said first transistor and said second transistor comprise a buried insulator region.

19. The content addressable memory of claim 16, wherein said first transistor comprises a first gate region and said second transistor comprises a second gate region.

20. The content addressable memory of claim 16, wherein said first transistor comprises a first conductivity type and said third transistor comprises said first conductivity type.

21. The content addressable memory of claim 16, wherein said first transistor comprises a first conductivity type and said third transistor comprises a second conductivity type different from said first conductivity type.

22. The content addressable memory of claim 16, further comprising a fourth transistor, having a third floating body.