Configuring storage cells
First Claim
Patent Images
1. An apparatus comprising:
- a data set read module configured to detect a shift in a read voltage level past a read voltage threshold for a set of memory cells of a non-volatile memory medium;
an adjustment module configured to, in response to the shift in the read voltage level, adjust a read voltage threshold for the set of memory cells by an amount based at least in part on one or more characteristics of the set of memory cells; and
a read voltage module configured to configure the set of memory cells to use the adjusted read voltage threshold;
wherein the adjustment module is external to the non-volatile memory medium.
6 Assignments
0 Petitions
Accused Products
Abstract
Apparatuses, systems, methods, and computer program products are disclosed for configuring storage cells. A method includes determining a usage history for a set of storage cells of a solid-state storage medium. A method includes adjusting a voltage threshold for a set of storage cells by an amount based at least in part on a usage history. A method includes configuring a set of storage cells to use an adjusted voltage threshold.
-
Citations
20 Claims
-
1. An apparatus comprising:
-
a data set read module configured to detect a shift in a read voltage level past a read voltage threshold for a set of memory cells of a non-volatile memory medium; an adjustment module configured to, in response to the shift in the read voltage level, adjust a read voltage threshold for the set of memory cells by an amount based at least in part on one or more characteristics of the set of memory cells; and a read voltage module configured to configure the set of memory cells to use the adjusted read voltage threshold; wherein the adjustment module is external to the non-volatile memory medium. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 14, 15, 16, 17, 18, 19, 20)
-
-
9. An apparatus comprising:
-
means for determining a number of program and erase cycles for a set of storage cells of a solid-state storage medium; and means for compensating for a change in read voltage levels for the set of storage cells based at least in part on the number of program and erase cycles;
wherein the means for compensating are external to the solid-state storage medium. - View Dependent Claims (10, 11, 12)
-
-
13. A method comprising:
-
determining a usage history for a set of storage cells of a solid-state storage medium; adjusting a voltage threshold for the set of storage cells by an amount based at least in part on the usage history; and configuring the set of storage cells to use the adjusted voltage threshold; wherein said adjusting is performed by a module external to the solid-state storage medium.
-
Specification