Method of fabricating a thin-film device
First Claim
1. A method of fabricating a thin-film device, including:
- forming an oxide-semiconductor film on a first electrical insulator; and
forming a second electrical insulator on said oxide-semiconductor film,said oxide-semiconductor film defining an active layer,said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation treatment,said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers,a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer,wherein the thin-film device comprises an insulating substrate; and
the oxide-semiconductor film formed on the first electrical insulator is not in contact with the insulating substrate.
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Abstract
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
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Citations
12 Claims
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1. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation treatment, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein the thin-film device comprises an insulating substrate; and the oxide-semiconductor film formed on the first electrical insulator is not in contact with the insulating substrate. - View Dependent Claims (2)
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3. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, said oxide-semiconductor film, a source/drain metal film, and a protection insulating film as said second electrical insulator, and wherein oxidation and the formation of said oxide-semiconductor film are carried out in this order without exposing said oxide-semiconductor film to atmosphere after the formation of said gate insulating film.
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4. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, said oxide-semiconductor film, a source/drain metal film, and a protection insulating film as said second electrical insulator, and wherein reduction to said oxide-semiconductor film and the formation of said source/drain metal film are carried out in this order without exposing said oxide-semiconductor film and said source/drain metal film to atmosphere after said oxide-semiconductor film was patterned. - View Dependent Claims (5)
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6. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, said oxide-semiconductor film, a source/drain metal film, and a protection insulating film as said second electrical insulator, and wherein oxidation and the formation of said protection insulating film are carried out in this order without exposing said oxide-semiconductor film and said protection insulating film to atmosphere after said source/drain metal film was patterned.
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7. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, an underlying electrically insulating film as said first electrical insulator, a source/drain metal film, said oxide-semiconductor film, a gate insulating film as said second electrical insulator, a gate metal film, and a protection insulating film, and wherein oxidation and the formation of said gate insulating film are carried out in this order without exposing said oxide-semiconductor film and said gate insulating film to atmosphere after the formation of said oxide-semiconductor film.
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8. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, an underlying electrically insulating film as said first electrical insulator, a source/drain metal film, said oxide-semiconductor film, a gate insulating film as said second electrical insulator, a gate metal film, and a protection insulating film, and wherein oxidation and the formation of said oxide-semiconductor film are carried out in this order without exposing said oxide-semiconductor film to atmosphere after said source/drain metal film was patterned.
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9. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, an underlying electrically insulating film as said first electrical insulator, said oxide-semiconductor film, a gate insulating film as said second electrical insulator, a gate metal film, an interlayer insulating film, a source/drain metal film, and a protection insulating film, and wherein oxidation and the formation of said oxide-semiconductor film are carried out in this order without exposing said oxide-semiconductor film to atmosphere after the formation of said underlying electrically insulating film.
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10. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, an underlying electrically insulating film as said first electrical insulator, said oxide-semiconductor film, a gate insulating film as said second electrical insulator, a gate metal film, an interlayer insulating film, a source/drain metal film, and a protection insulating film, and wherein oxidation and the formation of said gate insulating film are carried out in this order without exposing said oxide-semiconductor film and said gate insulating film to atmosphere after the formation of said oxide-semiconductor film.
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11. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, a source/drain metal film, said oxide-semiconductor film, and a protection insulating film as said second electrical insulator, and wherein oxidation and the formation of said oxide-semiconductor film are carried out in this order without exposing said oxide-semiconductor film to atmosphere after said source/drain metal film was patterned.
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12. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, a source/drain metal film, said oxide-semiconductor film, and a protection insulating film as said second electrical insulator, and wherein oxidation and the formation of said protection insulating film are carried out in this order without exposing said oxide-semiconductor film and said protection insulating film to atmosphere after said oxide-semiconductor film was patterned.
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Specification