GCIB etching method for adjusting fin height of finFET devices

• US 9,209,033 B2
• Filed: 06/17/2014
• Issued: 12/08/2015
• Est. Priority Date: 08/21/2013
• Status: Active Grant

• Current Assignee: TEL Manufacturing and Engineering of America, Inc.
• Original Assignee: TEL Epion Inc. (Tokyo Electron Limited)
• Inventors: Fernandez, Luis, Burke, Edmund
• Primary Examiner(s): Norton, Nadine
• Assistant Examiner(s): Dahimene, Mahmoud
• Application Number:
  US14/306,305
• Publication Number:
  US 20150056815A1
• Time in Patent Office: 539 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31056 the removal being a selective chemical etching step, e.g. selective dry etching through a mask
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.

Claims

1. A gas cluster ion beam (GCIB) etching method for adjusting fin height in finFET devices, comprising:

providing a substrate having a fin structure and a gap-fill material layer completely overlying said fin structure and filling the regions between each fin of said fin structure, wherein each fin includes a cap layer formed on a top surface thereof;

planarizing said gap-fill material layer until said cap layer is exposed on at least one fin of said fin structure;

setting a target fin height for said fin structure, said fin height measured from an interface between said cap layer and said fin structure;

establishing a GCIB from an etching process composition according to a process condition that achieves an etch selectivity in excess of 1.5, said etch selectivity being defined as a ratio between an etch rate of said gap-fill material layer and an etch rate of said cap layer; and

exposing said substrate to said GCIB and recessing said gap-fill material layer relative to said cap layer until said target fin height is substantially achieved.

2. The method of claim 1, further comprising:

establishing a pre-treatment GCIB from a pre-treatment etching process composition according to a pre-treatment process condition that achieves a pre-treatment etch selectivity of approximately unity, said pre-treatment etch selectivity being defined as a ratio between an etch rate of said gap-fill material layer and an etch rate of said cap layer; and

prior to recessing said gap-fill material layer relative to said cap layer, exposing said substrate to said pre-treatment GCIB and planarizing said gap-fill material layer and said cap layer.

3. The method of claim 1, wherein said fin structure is composed of Si, Ge, or a SiGe alloy.

4. The method of claim 1, wherein said cap layer comprises multiple layers.

5. The method of claim 1, wherein said cap layer comprises silicon nitride.

6. The method of claim 1, wherein said gap-fill material layer comprises silicon oxide.

7. The method of claim 1, wherein said process composition includes one or more pressurized gases containing a halogen-containing gas, halomethane, or halosilane, or a combination of two or more thereof.

8. The method of claim 7, wherein said process composition includes one or more pressurized gases containing CHF₃, or SiF₄, or both.

9. The method of claim 7, wherein said one or more pressurized gases further includes a noble gas element, or N₂, or both.

10. The method of claim 7, wherein said one or more pressurized gases further contains one or more elements selected from the group consisting of B, C, H, Si, Ge, N, P, As, O, S, F, Cl, and Br.

11. The method of claim 1, wherein said establishing said GCIB and exposing said substrate to said GCIB are achieved by performing the following:

maintaining a reduced-pressure environment around a substrate holder for holding said substrate;

holding said substrate securely within said reduced-pressure environment;

forming said GCIB from a pressurized gas mixture containing an etching compound composed of a halogen element and one or more elements selected from the group consisting of Si and Ge;

accelerating said GCIB; and

irradiating at least a portion of said GCIB onto at least a portion of said substrate.

12. The method of claim 11, further comprising:

selecting one or more target etch process metrics, said target etch process metrics including an etch rate of said gap-fill material layer, an etch rate of said cap layer, an etch selectivity between said gap-fill material layer and said cap layer, a surface roughness of said gap-fill material, a surface roughness of said cap layer, and a profile of said fin structure; and

setting one or more GCIB properties of a GCIB process condition for said GCIB to achieve said one or more target etch process metrics.

13. The method of claim 12, further comprising:

selecting target etch process metrics for said GCIB etching process, said target etch process metrics including an etch selectivity between said gap-fill material layer and said cap layer, and at least one of a surface roughness of said gap-fill material layer and a surface roughness of said cap layer; and

establishing a GCIB process condition including GCIB properties for said GCIB etching process to achieve said target etch process metrics, said process condition including setting a process composition, and setting a flow rate of at least one constituent in said GCIB composition, a beam acceleration potential, and at least one of a background gas pressure or a background gas flow rate for an increased pressure region through which said GCIB passes.

14. The method of claim 13, wherein said GCIB properties of said GCIB process condition further include a beam dose, a beam focus potential, a beam energy, a beam energy distribution, a beam angular distribution, a beam divergence angle, or a stagnation pressure.

15. The method of claim 12, wherein said GCIB composition includes a first etching compound and a second etching compound.

16. The method of claim 15, wherein said first etching compound and said second etching compound are continuously introduced to said GCIB during said irradiating.

17. The method of claim 15, wherein said first etching compound and said second etching compound are alternatingly and sequentially introduced to said GCIB during said irradiating.

18. The method of claim 12, further comprising:

introducing an additive gas to said GCIB to alter said GCIB composition and achieve said one or more target etch process metrics.

19. The method of claim 12, wherein said target surface roughness for said gap-fill material layer and/or said cap layer is less than or equal to 5 Angstroms.

20. The method of claim 1, wherein said etch selectivity is greater than or equal to 2.