Rapid conductive cooling using a secondary process plane
First Claim
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1. A method for thermally treating a substrate, comprising:
- providing a chamber having a levitating substrate support disposed therein;
sensing a position of the substrate support within the chamber;
adjusting the position of the substrate support within the chamber;
moving the substrate to a first position;
heating the substrate in the first position;
moving the substrate to a second position adjacent an active cooling means; and
cooling the substrate in the second position, wherein the first and second positions are disposed in the chamber.
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Abstract
In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source.
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Citations
16 Claims
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1. A method for thermally treating a substrate, comprising:
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providing a chamber having a levitating substrate support disposed therein; sensing a position of the substrate support within the chamber; adjusting the position of the substrate support within the chamber; moving the substrate to a first position; heating the substrate in the first position; moving the substrate to a second position adjacent an active cooling means; and cooling the substrate in the second position, wherein the first and second positions are disposed in the chamber. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for thermally treating a substrate, comprising:
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providing a chamber having a levitating substrate support disposed therein; sensing a position of the substrate support within the chamber; adjusting the position of the substrate support within the chamber; moving the substrate to a first position; heating the substrate in the first position; moving the substrate to a second position adjacent an active cooling means; and cooling the substrate in the second position, wherein the first and second positions are in the chamber, wherein the first position and second position each comprise a distance equal to one half of the sum of the first position and the second position. - View Dependent Claims (8, 9, 10, 11)
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12. A method for thermally treating a substrate, comprising:
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providing a chamber having a levitating substrate support disposed therein; sensing a position of the substrate support within the chamber; adjusting the position of the substrate support within the chamber; moving the substrate to a first position; heating the substrate in the first position; moving the substrate to a second position adjacent an active cooling means; and cooling the substrate in the second position, wherein the first and second positions are in the chamber, wherein sensing the position of the substrate support comprises sensing the diameter of the substrate. - View Dependent Claims (13, 14, 15, 16)
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Specification