Semiconductor component and method of manufacture
First Claim
Patent Images
1. A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material having a resistivity of at least 5 Ohm-centimeters;
forming a protection device from the semiconductor material byforming a doped region of a first conductivity type in the semiconductor material;
forming the protection device from the doped region of the first conductivity type, wherein forming the protection device comprises forming an ElectroStatic Discharge protection device; and
monolithically integrating a common mode filter over the semiconductor material.
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Abstract
A common mode filter monolithically integrated with a protection device. In accordance with an embodiment a semiconductor material having a resistivity of at least 5 Ohm-centimeters is provided. A protection device is formed from a portion of the semiconductor material and a dielectric material is formed over the semiconductor material. A coil is formed over the dielectric material.
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Citations
17 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having a resistivity of at least 5 Ohm-centimeters; forming a protection device from the semiconductor material by forming a doped region of a first conductivity type in the semiconductor material; forming the protection device from the doped region of the first conductivity type, wherein forming the protection device comprises forming an ElectroStatic Discharge protection device; and monolithically integrating a common mode filter over the semiconductor material. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having a resistivity of at least 5 Ohm-centimeters; forming a doped region of a first conductivity type in the semiconductor material; forming a protection device from the doped region of a first conductivity type from the doped region of the semiconductor material; and monolithically integrating a common mode filter over the semiconductor material by forming a first layer of material over a layer of dielectric material; and forming a first electrically conductive coil structure over the first layer of material; forming a second layer of material over the electrically conductive coil structure and over a portion of the first layer of material; forming a second electrically conductive coil structure over the second layer of material; forming a third layer of material over the second electrically conductive coil structure and over a portion of the second layer of material; forming an opening in the third layer of material; and forming an electrically conductive material in the opening in the third layer of material, wherein the first, second, and third layers of material are photosensitive materials. - View Dependent Claims (7)
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8. A method for manufacturing a chip scale package that includes a common mode filter monolithically integrated with a protection device, comprising:
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providing a semiconductor material having a resistivity of at least 5 Ohm-centimeters; forming a first doped region of a first conductivity type in the semiconductor material; forming the protection device from the first doped region; forming at least one contact to the semiconductor material; forming the common mode filter over the semiconductor material by forming a first layer of photosensitive material over the semiconductor material and the at least one contact; and forming an opening in the first layer of photosensitive material that exposes the at least one contact. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A monolithically integrated common mode filter and protection device configured as a chip scale package, comprising:
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a semiconductor material having a resistivity of at least 5 Ohm-centimeters; a protection device formed from the semiconductor material; a first layer of material over the semiconductor material, the first layer of the first material having an opening filled with a first electrically conductive material, wherein the first layer of material is a photosensitive material; and a first coil over the first layer of material. - View Dependent Claims (17)
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Specification