Method for manufacturing semiconductor device and adhesive for mounting flip chip

• US 9,209,155 B2
• Filed: 08/05/2013
• Issued: 12/08/2015
• Est. Priority Date: 08/06/2012
• Status: Active Grant

• Current Assignee: Sekisui Chemical Company Limited (Sekisui)
• Original Assignee: Sekisui Chemical Company Limited (Sekisui)
• Inventors: Wakioka, Sayaka, Nakagawa, Hiroaki, Nishimura, Yoshio, Sadanaga, Shujiro
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US14/391,781
• Publication Number:
  US 20150064847A1
• Time in Patent Office: 855 Days
• US Class Current: 1/1
• CPC Class Codes: C08K 9/06 with silicon-containing compounds
• CPC Class Codes: C09J 163/00 Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/27 Manufacturing methods
• CPC Class Codes: H01L 2224/27003 for holding or transferring the layer preform
• CPC Class Codes: H01L 2224/271 Manufacture and pre-treatment of the layer connector preform
• CPC Class Codes: H01L 2224/27312 Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
• CPC Class Codes: H01L 2224/2732 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/27416 Spin coating
• CPC Class Codes: H01L 2224/27436 Lamination of a preform, e.g. foil, sheet or layer
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29294 with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• CPC Class Codes: H01L 2224/29387 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2224/2949 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73104 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/8113 : using marks formed on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81132 : using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/83091 : Under pressure
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83204 : with a graded temperature profile
• CPC Class Codes: H01L 2224/83855 : Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/83907 : Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
• CPC Class Codes: H01L 2224/83986 : Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
• CPC Class Codes: H01L 2224/9205 : Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process
• CPC Class Codes: H01L 2224/9211 : Parallel connecting processes
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/20106 : Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 2924/3841 : Solder bridging

Abstract

The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

Claims

1. A method for producing a semiconductor device, comprising:

step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder;

step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and

step 3 of removing voids by heating the adhesive under a pressurized atmosphere,

the adhesive having an activation energy Δ

E of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260°

C., and a reaction rate of 40% or less at 4 seconds at 260°

C., as determined by differential scanning calorimetry and Ozawa method.

2. The method for producing a semiconductor device according to claim 1,

wherein the adhesive contains at least a thermosetting resin and a thermosetting agent, and

the thermosetting resin is an epoxy resin.

3. The method for producing a semiconductor device according to claim 2,

wherein the adhesive further contains a curing accelerator.

4. The method for producing a semiconductor device according to claim 2,

wherein the adhesive further contains an inorganic filler, and

the amount of the inorganic filler is 60% by weight or less.

5. The method for producing a semiconductor device according to claim 2,

wherein the adhesive is a film-like adhesive.

6. The method for producing a semiconductor device according to claim 1,

wherein the adhesive further contains a curing accelerator.

7. The method for producing a semiconductor device according to claim 6,

wherein the adhesive further contains an inorganic filler, and

the amount of the inorganic filler is 60% by weight or less.

8. The method for producing a semiconductor device according to claim 6,

wherein the adhesive is a film-like adhesive.

9. The method for producing a semiconductor device according to claim 1,

wherein the adhesive further contains an inorganic filler, and

the amount of the inorganic filler is 60% by weight or less.

10. The method for producing a semiconductor device according to claim 9,

wherein the adhesive is a film-like adhesive.

11. The method for producing a semiconductor device according to claim 1,

wherein the adhesive is a film-like adhesive.