Formation of through via before contact processing
First Claim
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1. A method for forming one or more through vias comprising:
- forming active devices on a front-side of a first wafer, the first wafer comprising a back-side opposite the front-side of the first wafer;
forming one or more recesses in the first wafer prior to forming an interlayer dielectric (ILD) layer over the front-side of the first wafer, the one or more recesses extending from the front-side of the first wafer to a predetermined distance from the back-side of the first wafer;
forming conductive material in the one or more recesses, the conducting material forming one or more through vias;
forming a first contact connected to at least one of the one or more through vias;
forming a first bonding pad connected to the first contact, wherein the first bonding pad is different from the first contact and wherein the first bonding pad comprises at least one sidewall in physical contact with a dielectric material;
forming a dielectric layer over the back-side of the first wafer, wherein the forming of the dielectric layer is performed after the forming the conductive material; and
forming a metallization layer within the dielectric layer over the back-side of the first wafer, the metallization layer comprising a second contact electrically connected to at least one of the one or more through vias and also being exposed to allow current to flow to at least one of the one or more through vias.
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Abstract
The formation of through silicon vias (TSVs) in an integrated circuit (IC) die or wafer is described in which the TSV is formed in the integration process prior to contact or metallization processing. Contacts and bonding pads may then be fabricated after the TSVs are already in place, which allows the TSV to be more dense and allows more freedom in the overall TSV design. By providing a denser connection between TSVs and bonding pads, individual wafers and dies may be bonded directly at the bonding pads. The conductive bonding material, thus, maintains an electrical connection to the TSVs and other IC components through the bonding pads.
105 Citations
18 Claims
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1. A method for forming one or more through vias comprising:
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forming active devices on a front-side of a first wafer, the first wafer comprising a back-side opposite the front-side of the first wafer; forming one or more recesses in the first wafer prior to forming an interlayer dielectric (ILD) layer over the front-side of the first wafer, the one or more recesses extending from the front-side of the first wafer to a predetermined distance from the back-side of the first wafer; forming conductive material in the one or more recesses, the conducting material forming one or more through vias; forming a first contact connected to at least one of the one or more through vias; forming a first bonding pad connected to the first contact, wherein the first bonding pad is different from the first contact and wherein the first bonding pad comprises at least one sidewall in physical contact with a dielectric material; forming a dielectric layer over the back-side of the first wafer, wherein the forming of the dielectric layer is performed after the forming the conductive material; and forming a metallization layer within the dielectric layer over the back-side of the first wafer, the metallization layer comprising a second contact electrically connected to at least one of the one or more through vias and also being exposed to allow current to flow to at least one of the one or more through vias. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for bonding one or more wafers comprising:
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positioning a first wafer, the first wafer having active devices and a first bonding pad connected to a first contact, the first bonding pad being different from the first contact, the first bonding pad comprising at least one sidewall in physical contact with a first dielectric material, the first contact connected to a first through silicon via (TSV), the first TSV extending through an internal portion of the first wafer; positioning a second wafer in relation to the first wafer, the second wafer having a second bonding pad connected to a second TSV, the second TSV extending through the second wafer; bonding the first bonding pad and the second bonding pad using a bonding material that is electrically compatible with the first bonding pad and the second bonding pad; and forming a third bonding pad within a dielectric layer on a back-side of the first wafer, the forming of the third bonding pad being performed after the bonding the first bonding pad and the second bonding pad, the third bonding pad connected to the first TSV. - View Dependent Claims (11, 12, 13, 14)
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15. A method for forming a semiconductor device comprising:
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forming a first through silicon via (TSV) in a first integrated circuit (IC) die, the first IC die comprising active devices located on a front-side; after the forming of the first TSV, processing the first IC die to add; a first contact connected to the first TSV; and a first bonding pad connected to the first contact, wherein the first bonding pad is different from the first contact and wherein the first bonding pad comprises at least one sidewall in physical contact with a dielectric material; forming a second TSV in a second IC die; after the forming the second TSV, processing the second IC die to add; a second contact connected to the second TSV; and a second bonding pad connected to the second contact; and bonding the first bonding pad to the second bonding pad using a rigid conducting material. - View Dependent Claims (16, 17, 18)
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Specification