Vertical topology light-emitting device

• US 9,209,360 B2
• Filed: 12/30/2014
• Issued: 12/08/2015
• Est. Priority Date: 04/09/2002
• Status: Expired due to Term

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US14/586,418
• Publication Number:
  US 20150155438A1
• Time in Patent Office: 343 Days
• Field of Search: 257/79, 257/103
• US Class Current: 1/1
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.

Claims

1. A light emitting device, comprising:

a metal support structure comprising Cu;

an adhesion structure on the metal support structure;

a first metal layer on the adhesion structure;

a second metal layer comprising Ti on the first metal layer;

a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;

an interface layer on the GaN-based semiconductor structure; and

a contact pad on the interface layer,

wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and

wherein a thickness of the metal support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.

2. The device according to claim 1, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.

3. The device according to claim 2, wherein the first adhesion layer is thicker than the second adhesion layer.

4. The device according to claim 1, wherein the first metal layer is thicker than the second metal layer.

5. The device according to claim 1, wherein the interface layer comprises Ti.

6. The device according to claim 1, wherein the interface layer comprises a first interface layer and a second interface layer.

7. The device according to claim 1, wherein the contact pad comprises Au.

8. The device according to claim 1, wherein the contact pad has a diameter of 100 microns.

9. A light emitting device, comprising:

a metal support structure;

an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;

a first metal layer on the adhesion structure;

a second metal layer comprising Ti on the first metal layer;

a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;

an interface layer on the GaN-based semiconductor structure; and

a contact pad on the interface layer,

wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and

wherein a thickness of the metal support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.

10. The device according to claim 9, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.

11. The device according to claim 10, wherein the first adhesion layer is thicker than the second adhesion layer.

12. The device according to claim 9, wherein the first metal layer is thicker than the second metal layer.

13. The device according to claim 9, wherein the interface layer comprises Ti.

14. The device according to claim 9, wherein the interface layer comprises a first interface layer and a second interface layer.

15. A light emitting device, comprising:

a support structure;

an adhesion structure comprising Au on the support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;

a first metal layer on the adhesion structure;

a second metal layer on the first metal layer;

a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;

an interface layer on the GaN-based semiconductor structure; and

a contact pad on the interface layer,

wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and

wherein a thickness of the support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.

16. The device according to claim 15, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.

17. The device according to claim 16, wherein the first adhesion layer is thicker than the second adhesion layer.

18. The device according to claim 15, wherein the first metal layer is thicker than the second metal layer.

19. The device according to claim 15, wherein the interface layer comprises Ti.

20. The device according to claim 15, wherein the interface layer comprises a first interface layer and a second interface layer.