Magneto-resistive element having a ferromagnetic layer containing boron
First Claim
Patent Images
1. A magneto-resistive element comprising:
- a first ferromagnetic layer formed on a substrate;
a tunnel barrier layer formed on the first ferromagnetic layer; and
a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2,wherein a concentration of any of He, Ne, Ar, Kr, Xe and N2 contained in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than the concentration in an upper portion of the second ferromagnetic layer.
5 Assignments
0 Petitions
Accused Products
Abstract
According to one embodiment, a magneto-resistive element includes a first ferromagnetic layer formed on a substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2.
-
Citations
4 Claims
-
1. A magneto-resistive element comprising:
-
a first ferromagnetic layer formed on a substrate; a tunnel barrier layer formed on the first ferromagnetic layer; and a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2, wherein a concentration of any of He, Ne, Ar, Kr, Xe and N2 contained in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than the concentration in an upper portion of the second ferromagnetic layer. - View Dependent Claims (2, 3, 4)
-
Specification