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Magneto-resistive element having a ferromagnetic layer containing boron

  • US 9,209,386 B2
  • Filed: 01/16/2014
  • Issued: 12/08/2015
  • Est. Priority Date: 09/06/2013
  • Status: Active Grant
First Claim
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1. A magneto-resistive element comprising:

  • a first ferromagnetic layer formed on a substrate;

    a tunnel barrier layer formed on the first ferromagnetic layer; and

    a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2,wherein a concentration of any of He, Ne, Ar, Kr, Xe and N2 contained in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than the concentration in an upper portion of the second ferromagnetic layer.

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