Systems and methods for calibrating a switched mode ion energy distribution system
First Claim
1. A method of calibrating a bias supply configured to generate a potential on a top surface of a substrate during plasma processing of the substrate, the method comprising:
- emulating a plasma sheath capacitance with a variable capacitance circuit of a plasma load emulator without generating any plasma;
emulating plasma ion current with a variable current source without generating any plasma;
receiving a modified periodic voltage function from the bias supply comprising pulses and a portion between the pulses;
receiving an expected ion energy;
receiving an expected ion current;
delivering the modified periodic voltage function to a plasma load emulator;
measuring a voltage across the variable capacitance circuit of the plasma load emulator;
applying a known current from the variable current source of the plasma load emulator to the variable capacitance circuit to emulate the ion current;
comparing the voltage across the variable capacitance circuit of the plasma load emulator to the expected ion energy and determining an ion energy error from this comparing;
comparing the known current from the variable current source of the plasma load emulator to the expected ion current and determining an ion current error from this comparing;
generating calibration data with the ion energy error and the ion current error; and
storing the calibration data in a calibration data store in the bias supply, wherein the calibration data is subsequently utilized to more accurately effectuate ion energy in an actual plasma during the plasma processing of the substrate.
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Accused Products
Abstract
Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.
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Citations
28 Claims
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1. A method of calibrating a bias supply configured to generate a potential on a top surface of a substrate during plasma processing of the substrate, the method comprising:
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emulating a plasma sheath capacitance with a variable capacitance circuit of a plasma load emulator without generating any plasma; emulating plasma ion current with a variable current source without generating any plasma; receiving a modified periodic voltage function from the bias supply comprising pulses and a portion between the pulses; receiving an expected ion energy; receiving an expected ion current; delivering the modified periodic voltage function to a plasma load emulator; measuring a voltage across the variable capacitance circuit of the plasma load emulator; applying a known current from the variable current source of the plasma load emulator to the variable capacitance circuit to emulate the ion current; comparing the voltage across the variable capacitance circuit of the plasma load emulator to the expected ion energy and determining an ion energy error from this comparing; comparing the known current from the variable current source of the plasma load emulator to the expected ion current and determining an ion current error from this comparing; generating calibration data with the ion energy error and the ion current error; and storing the calibration data in a calibration data store in the bias supply, wherein the calibration data is subsequently utilized to more accurately effectuate ion energy in an actual plasma during the plasma processing of the substrate. - View Dependent Claims (2, 3, 4, 5)
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6. A system comprising:
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a bias supply providing a modified periodic voltage, the bias supply comprising; a power supply configured to provide a periodic voltage function to an output; an ion current compensation component coupled to the output and configured to modify the periodic voltage function with an ion compensation current so that the bias supply provides the modified periodic voltage function; and a controller configured to provide instructions to the power supply to adjust the periodic voltage function and to provide instructions to the ion current compensation component to adjust the ion compensation current; a calibration component, separate from the bias supply and coupled to the output to receive the modified periodic voltage function, the calibration component comprising; a load emulator having; circuitry configured to emulate impedance, rectifying effects, ion current and capacitive characteristics of a plasma load without generating any plasma, the load emulator further configured to receive the modified periodic voltage function, and wherein; the capacitive characteristics comprise a sheath capacitance and an effective capacitance, and the circuity configured to emulate rectifying effects comprises reverse biased components when the load emulator emulates a plasma load without generating any plasma; a measurement component configured to make one or more measurements of the modified periodic voltage function as it interacts with the circuitry of the load emulator; and an analysis component configured to generate and store calibration data by comparing at least one measured value from the measurement component and at least one expected value from the bias supply wherein the calibration data is subsequently utilized to more accurately effectuate ion energy in an actual plasma during plasma processing. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A system comprising:
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a bias supply that generates a modified periodic voltage function, wherein the modified periodic voltage function comprises periodic pulses with a sloped portion between the pulses, wherein the slope of the sloped portion between the pulses is controlled via an ion compensation current; and a calibration component, separate from the bias supply, the calibration component is disposed to receive the modified periodic voltage function and includes voltage and current sensors to measure a voltage and a current, respectively, of the modified periodic voltage function in a load emulator, the voltage emulating a substrate voltage associated with a plasma load without generating any plasma, the current emulating an ion current in the plasma load without generating any plasma, and further emulating rectifying effects, wherein the rectifying effects are emulated through reverse biased rectifying components when the load emulator emulates a plasma load without generating any plasma. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A calibration component to calibrate a bias supply comprising:
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a load emulator configured to receive a modified periodic voltage function, the load emulator including; a variable capacitance circuit to emulate a plasma sheath capacitance without generating any plasma; a variable current source to emulate plasma ion current without generating any plasma; and circuity configured to emulate plasma rectifying effects comprising components that are reverse-biased when the load emulator emulates a plasma load without generating any plasma a measurement component configured to measure at least a current from the variable current source and a voltage within the load emulator as the modified periodic voltage function interacts with circuitry within the load emulator; and an analysis component configured to compare the measured current and the measured voltage to an expected current and an expected voltage to generate calibration data, wherein the calibration data is subsequently utilized by the bias supply to more accurately effectuate ion energy in an actual plasma during plasma processing.
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Specification