Cubic silicon carbide implantable neural prosthetic

• US 9,211,401 B2
• Filed: 05/24/2012
• Issued: 12/15/2015
• Est. Priority Date: 11/30/2009
• Status: Active Grant

• Current Assignee: University of South Florida (State University System of Florida)
• Original Assignee: University of South Florida (State University System of Florida)
• Inventors: Frewin, Christopher Leroy, Saddow, Stephen E., Weeber, Edwin
• Primary Examiner(s): Voorhees, Catherine
• Assistant Examiner(s): Dinga, Roland
• Application Number:
  US13/479,631
• Publication Number:
  US 20120232631A1
• Time in Patent Office: 1,300 Days
• Field of Search: 607/377, 607/373
• US Class Current: 1/1
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61N 1/0529 Electrodes for brain stimulation
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: Y10T 29/49194 Assembling elongated conductors, e.g., splicing, etc.

Abstract

An implantable neuronal prosthetic and method of manufacture thereof includes at least one elongated electrode shank adapted for arrangement in the brain having at least one electrode contact disposed on its surface and arranged to electrically couple with said brain. The at least one elongated electrode shank is formed form a single crystal cubic silicon carbide. An insulation layer of amorphous, polycrystalline, or single crystal silicon carbide is disposed over the elongated electrode shank; the insulation layer of amorphous, polycrystalline, or single crystal silicon carbide is removed from the at least one electrode contact. Signal control electronics are attached to the at least one elongated electrode shank and are in electrical communication with the at least one electrode contact. In an embodiment, a plurality of the at least one elongated electrode shanks are arranged into a matrix.

Claims

1. An implantable neuronal prosthetic for placement in a brain of a patient for receiving and sending electrical signals, comprising:

at least one elongated electrode shank adapted for arrangement in the brain having at least one electrode contact disposed on its surface and arranged to electrically couple with the brain, the at least one elongated electrode shank being formed from a single crystal cubic silicon carbide.

2. The implantable neuronal prosthetic of claim 1, further comprising:

the at least one electrode contact being formed from the group consisting of gold, platinum, platinum-iridium alloys, iridium oxide, stainless steel, tungsten, and titanium nitride.

3. The implantable neuronal prosthetic of claim 1, further comprising:

an insulation layer of amorphous, polycrystalline, or single crystal silicon carbide disposed over the elongated electrode shank, the insulation layer of amorphous, polycrystalline, or single crystal silicon carbide being removed from the at least one electrode contact.

4. The implantable neuronal prosthetic of claim 1, further comprising:

signal control electronics attached to the at least one elongated electrode shank and in communication with the at least one electrode contact.

5. The implantable neuronal prosthetic of claim 1, further comprising:

a plurality of the at least one elongated electrode shanks being arranged into a matrix.

6. A method of manufacturing an implantable neuronal prosthetic for placement in a brain of a patient for receiving and sending electrical signals, comprising the steps of:

forming at least one elongated electrode shank adapted for arrangement in the brain out of a single crystal cubic silicon carbide; and

forming at least one electrode contact on a surface of at least one elongated electrode shank, the at least one electrode being arranged to electrically couple with the brain.

7. The method of claim 6, wherein the at least one electrode contact is formed from the group consisting of gold, platinum, platinum-iridium alloys, iridium oxide, stainless steel, tungsten, and titanium nitride.

8. The method of claim 6, further comprising the steps of:

insulating the at least one elongated electrode shank with amorphous, polycrystalline, or single crystal silicon carbide; and

removing the insulating layer of amorphous, polycrystalline, or single crystal silicon carbide from the at least one electrode contact such that the at least one electrode contact is exposed.

9. The method of claim 6, further comprising the step of:

attaching signal control electronics to the at least one elongated electrode shank, the signal control electronics being in communication with the at least one electrode contact.

10. The method of claim 6, further comprising the step of:

arranging a plurality of the at least one elongated electrode shanks into a matrix.