Cap and substrate electrical connection at wafer level

• US 9,212,050 B2
• Filed: 11/22/2013
• Issued: 12/15/2015
• Est. Priority Date: 07/15/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Peng, Jung-Huei
• Primary Examiner(s): GHYKA, ALEXANDER G
• Application Number:
  US14/087,887
• Publication Number:
  US 20140061730A1
• Time in Patent Office: 753 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer

Abstract

A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

Claims

1. A device comprising:

an electrically conductive ground structure disposed in a first substrate and electrically coupled to a second substrate, wherein the electrically conductive ground structure extends from a top surface of the first substrate to an opposing bottom surface of the first substrate;

a dielectric layer interposed between the first substrate and the second substrate;

a conductive layer disposed within the dielectric layer, wherein the conductive layer physically contacts the electrically conductive ground structure;

a conductive plug extending from the top surface of the first substrate to the opposing bottom surface of the first substrate and through the dielectric layer to the conductive layer such that the conductive plug physically contacts the conductive layer; and

a cap that includes a third substrate positioned over the first substrate and electrically coupled to electrically coupled to the ground structure.

2. The device of claim 1, wherein the electrically conductive ground structure physically contacts the second substrate.

3. The device claim 1, further comprising another dielectric layer interposed between the first substrate and the third substrate.

4. The device of claim 1, further comprising another dielectric layer interposed between the first substrate and the second substrate.

5. The device of claim 1, further comprising a microelectromechanical system (MEMS) device on the first substrate.

6. The device of claim 1, further comprising a bonding pad over the first substrate, and wherein the cap is coupled to the first substrate via the bonding pad.

7. The device of claim 6, wherein the cap further includes:

another dielectric layer disposed on the third substrate; and

an electrically conductive surface on the another dielectric layer that physically contacts the bonding pad.

8. The device of claim 1, wherein the electrically conductive ground structure extends completely through the dielectric layer.

20. The device of claim 1, further comprising a microelectromechanical system (MEMS) device disposed within a cavity defined by the first substrate, and

wherein the conductive layer is separated from the MEMS device by the dielectric layer.

9. A device comprising:

an electrically conductive ground structure disposed in a first substrate, wherein the electrically conductive ground structure extends completely through the first substrate to a top surface of a second substrate such that the electrically conductive ground structure physically contacts the top surface of the second substrate;

a dielectric layer interposed between the first substrate and the second substrate;

a conductive layer disposed within the dielectric layer, wherein the conductive layer physically contacts the conductive ground structure;

a conductive plug extending extends completely through the first substrate to the conductive layer such that the conductive plug physically contacts the conductive layer; and

a cap coupled to the first substrate and electrically coupled to the ground structure.

10. The device of claim 9, further comprising another dielectric layer disposed over the first substrate such that the another dielectric layer is disposed between the cap and the first substrate.

11. The device of claim 9, further comprising a complementary metal oxide semiconductor (CMOS) device on the first substrate.

12. The device of claim 11, further comprising a microelectromechanical system (MEMS) device on the first substrate.

13. The device of claim 9, wherein the electrically conductive ground structure extends completely through the dielectric layer.

14. The device of claim 9, wherein the dielectric layer interposed between the first substrate and the second includes a first dielectric layer and a second dielectric layer.

15. A device comprising:

an electrically conductive ground structure disposed in a first substrate and electrically coupled to a second substrate, wherein the electrically ground structure extends from a top surface of the first substrate to an opposing bottom surface of the first substrate, wherein the first substrate has a cavity;

a microelectromechanical system (MEMS) device disposed within the cavity of the first substrate;

a dielectric layer interposed between the first substrate and the second substrate, wherein the dielectric Layer is disposed below the cavity;

a conductive layer disposed within the dielectric layer and separated from the MEMS device by the dielectric layer, wherein the conductive layer physically contacts the electrically conductive ground structure; and

a cap that includes a third substrate positioned over the first substrate and electrically coupled to electrically coupled to the ground structure.

16. The device of claim 15, further comprising a conductive plug extending from the top surface of the first substrate to the opposing bottom surface of the first substrate and through the dielectric layer to the conductive layer such that the conductive plug physically contacts the conductive layer, and

wherein the conductive layer has a top surface facing the last substrate, and

wherein the conductive plug physically contacts the top surface of the conductive layer.

17. The device of claim 16, wherein the conductive layer extends continuously from the conductive plug to the electrically conductive ground structure within the dielectric layer.

18. The device of claim 15, wherein the electrically conductive ground structure has opposing sidewall surfaces extending through the dielectric layer, and

wherein the conductive layer physically contacts one of the opposing sidewall surfaces of the electrically conductive ground structure.

19. the device of claim 15, wherein the electrically conductive ground structure extends to and physically contacts the second substrate, wherein the second substrate is formed of a semiconductor material and the electrically conductive ground structure physically contacts the semiconductor material of the second substrate.