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CVD reactor with gas flow virtual walls

  • US 9,212,422 B2
  • Filed: 08/31/2011
  • Issued: 12/15/2015
  • Est. Priority Date: 08/31/2011
  • Status: Active Grant
First Claim
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1. A chemical vapor deposition reactor for film formation comprising:

  • a containment housing; and

    a chemical vapor deposition zone inside of the containment housing;

    wherein the chemical vapor deposition zone has a perimeter exhaust port with a liner at an opening thereof and is circumferentially bounded by virtual walls defined by a first radially outward gas flow of a reactant gas and a second radially inward gas flow of a non-reactant gas that merge proximate to the perimeter exhaust port to form merged gas flow exiting out through orifices in the liner of the perimeter exhaust port, the pull of the first gas flow and the second gas flow out through the exhaust port being controlled by the presence of the orifices, to avoid overshoot of the exhaust port by either gas flow and thereby to eliminate any pressure difference within the containment housing so as to maintain stability of the virtual walls.

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