CVD reactor with gas flow virtual walls
First Claim
1. A chemical vapor deposition reactor for film formation comprising:
- a containment housing; and
a chemical vapor deposition zone inside of the containment housing;
wherein the chemical vapor deposition zone has a perimeter exhaust port with a liner at an opening thereof and is circumferentially bounded by virtual walls defined by a first radially outward gas flow of a reactant gas and a second radially inward gas flow of a non-reactant gas that merge proximate to the perimeter exhaust port to form merged gas flow exiting out through orifices in the liner of the perimeter exhaust port, the pull of the first gas flow and the second gas flow out through the exhaust port being controlled by the presence of the orifices, to avoid overshoot of the exhaust port by either gas flow and thereby to eliminate any pressure difference within the containment housing so as to maintain stability of the virtual walls.
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Accused Products
Abstract
A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.
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Citations
8 Claims
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1. A chemical vapor deposition reactor for film formation comprising:
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a containment housing; and a chemical vapor deposition zone inside of the containment housing; wherein the chemical vapor deposition zone has a perimeter exhaust port with a liner at an opening thereof and is circumferentially bounded by virtual walls defined by a first radially outward gas flow of a reactant gas and a second radially inward gas flow of a non-reactant gas that merge proximate to the perimeter exhaust port to form merged gas flow exiting out through orifices in the liner of the perimeter exhaust port, the pull of the first gas flow and the second gas flow out through the exhaust port being controlled by the presence of the orifices, to avoid overshoot of the exhaust port by either gas flow and thereby to eliminate any pressure difference within the containment housing so as to maintain stability of the virtual walls. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification